SIS414DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIS414DN-T1-GE3TR-ND

Manufacturer Part#:

SIS414DN-T1-GE3

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 20A 1212-8 PPAK
More Detail: N-Channel 30V 20A (Tc) 3.4W (Ta), 31W (Tc) Surface...
DataSheet: SIS414DN-T1-GE3 datasheetSIS414DN-T1-GE3 Datasheet/PDF
Quantity: 9000
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 9000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FETs (Field Effect Transistors) are one of the most commonly used types of integrated circuits, and one of the most widely used types is the SIS414DN-T1-GE3 FET. As the name suggests, FETs are used to amplify electric fields and are used in many different applications, from high-performance audio amplifiers to complex computers.

The SIS414DN-T1-GE3 is a single-channel N-channel FET that is optimized for low-voltage, low-power applications. It is manufactured by Semiconductor Innovation Corporation (SIC) and is widely used in industrial and consumer electronics.

The SIS414DN-T1-GE3 is designed to operate in a wide range of temperatures, from -40 °C to +85 °C, which makes it ideal for use in extreme temperature environments. It also has a very low on-state channel resistance, which helps to reduce device power consumption and improve efficiency. In addition, the device has a very high input capacitance, which helps to reduce dynamic losses and improve device stability.

The working principle of the SIS414DN-T1-GE3 is relatively simple. The FET is a three-terminal device that is constructed with two source and drain contacts separated by a gate. The drain and source terminals are connected to the external circuit, and the gate terminal is connected to the control circuit (usually a logic gate). When the gate voltage is increased or decreased, the drain current changes, allowing the device to control the current in the circuit.

In terms of applications, the SIS414DN-T1-GE3 FET is widely used in many different systems. It is used in power supplies, motor control, and switching applications. It is also used in data communications systems as an automatic switching device. The FET can also be used in applications where low noise and high-frequency switching is needed.

The SIS414DN-T1-GE3 FET is an ideal choice for a wide range of applications. It is designed to operate in a wide range of temperatures, has a very low on-state channel resistance, and has a very high input capacitance. It is also efficient, reliable, and cost-effective. Therefore, it is a great choice for many different types of circuit applications.

The specific data is subject to PDF, and the above content is for reference

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