
Allicdata Part #: | SIS443DN-T1-GE3TR-ND |
Manufacturer Part#: |
SIS443DN-T1-GE3 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 35A PPAK 1212-8 |
More Detail: | P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.10000 |
10 +: | $ 0.09700 |
100 +: | $ 0.09500 |
1000 +: | $ 0.09300 |
10000 +: | $ 0.09000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4370pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIS443DN-T1-GE3 is a type of circuit component that falls under the transistors - FETs, MOSFETs - Single category. It is typically used to control power supply in various electronic devices. Its utility is most often seen in portable electronics as it helps efficiently regulate power when it is needed. SIS443DN-T1-GE3 is a type of Insulated Gate Bipolar Transistor (IGBT) that consists of a P-type and an N-type field-effect transistor (FET).
This component typically offers better efficiency and switching times compared to traditional transistors. This makes it a great choice for applications that need to control power carefully and accurately. It has very high switching frequency and low saturation voltage, which allows it to provide higher power handling capabilities.
The component\'s application fields include a variety of automotive and industrial electronics. In motor control systems, it is used to switch the power being supplied to the motor. It is also used for power factor correction, which ensures that the power being supplied is optimized so that the devices run with greater efficiency. In telecommunications, it is used in power amplifiers to increase the power delivered to the antenna.
The component also has uses in home electronics such as in TV and audio amplifiers. It is also used in power supplies, photovoltaics, and LED drivers. It is able to provide faster switching actions than traditional bipolar transistors. This makes it useful in situations where quick response times are required.
The working principle of the SIS443DN-T1-GE3 is quite simple. It consists of two separated gates with an oxide layer placed between them. The oxide layer is an insulator that separates the two gates. When voltage is applied to the gates, an electric current is induced in the oxide layer, resulting in the formation of a low resistance channel. The current then flows through the channel, allowing for the power to be regulated. This allows for precise control of the supply current.
The component is also easy to use and it is compatible with different types of circuits. It is also able to operate at low voltage, which makes it ideal for portable electronics. It is a reliable component that can be used in a wide variety of applications.
The SIS443DN-T1-GE3 is a very useful component, especially in automotive and industrial applications. It can provide greater efficiency and faster switching times than traditional transistors. Its ease of use, compact size, and low voltage compatibility make it an ideal choice for mobile electronics.
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