SIS443DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIS443DN-T1-GE3TR-ND

Manufacturer Part#:

SIS443DN-T1-GE3

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 40V 35A PPAK 1212-8
More Detail: P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface...
DataSheet: SIS443DN-T1-GE3 datasheetSIS443DN-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.10000
10 +: $ 0.09700
100 +: $ 0.09500
1000 +: $ 0.09300
10000 +: $ 0.09000
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIS443DN-T1-GE3 is a type of circuit component that falls under the transistors - FETs, MOSFETs - Single category. It is typically used to control power supply in various electronic devices. Its utility is most often seen in portable electronics as it helps efficiently regulate power when it is needed. SIS443DN-T1-GE3 is a type of Insulated Gate Bipolar Transistor (IGBT) that consists of a P-type and an N-type field-effect transistor (FET).

This component typically offers better efficiency and switching times compared to traditional transistors. This makes it a great choice for applications that need to control power carefully and accurately. It has very high switching frequency and low saturation voltage, which allows it to provide higher power handling capabilities.

The component\'s application fields include a variety of automotive and industrial electronics. In motor control systems, it is used to switch the power being supplied to the motor. It is also used for power factor correction, which ensures that the power being supplied is optimized so that the devices run with greater efficiency. In telecommunications, it is used in power amplifiers to increase the power delivered to the antenna.

The component also has uses in home electronics such as in TV and audio amplifiers. It is also used in power supplies, photovoltaics, and LED drivers. It is able to provide faster switching actions than traditional bipolar transistors. This makes it useful in situations where quick response times are required.

The working principle of the SIS443DN-T1-GE3 is quite simple. It consists of two separated gates with an oxide layer placed between them. The oxide layer is an insulator that separates the two gates. When voltage is applied to the gates, an electric current is induced in the oxide layer, resulting in the formation of a low resistance channel. The current then flows through the channel, allowing for the power to be regulated. This allows for precise control of the supply current.

The component is also easy to use and it is compatible with different types of circuits. It is also able to operate at low voltage, which makes it ideal for portable electronics. It is a reliable component that can be used in a wide variety of applications.

The SIS443DN-T1-GE3 is a very useful component, especially in automotive and industrial applications. It can provide greater efficiency and faster switching times than traditional transistors. Its ease of use, compact size, and low voltage compatibility make it an ideal choice for mobile electronics.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIS4" Included word is 33
Part Number Manufacturer Price Quantity Description
SIS435DNT-T1-GE3 Vishay Silic... -- 3000 MOSFET P-CH 20V 30A 1212-...
SIS427EDN-T1-GE3 Vishay Silic... -- 21000 MOSFET P-CH 30V 50A 1212-...
SIS448DN-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 35A 1212-...
SIS424DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 35A PPAK ...
SIS439DNT-T1-GE3 Vishay Silic... -- 3000 MOSFET P-CH 30V 50A 1212-...
SIS436DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 16A PPAK ...
SIS415DNT-T1-GE3 Vishay Silic... 0.22 $ 1000 MOSFET P-CH 20V 35A 1212-...
SIS496EDNT-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 50A POWER...
SIS472ADN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 24A POWER...
SIS429DNT-T1-GE3 Vishay Silic... 0.11 $ 1000 MOSFET P-CH 30V 20A POWER...
SIS443DN-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 40V 35A PPAK ...
SIS426DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 35A 1212-...
SIS412DN-T1-GE3 Vishay Silic... -- 1785 MOSFET N-CH 30V 12A 1212-...
SIS407ADN-T1-GE3 Vishay Silic... -- 9000 MOSFET P-CH 20V 18A 1212-...
SIS452DN-T1-GE3 Vishay Silic... 0.42 $ 1000 MOSFET N-CH 12V 35A 1212-...
SIS402DN-T1-GE3 Vishay Silic... -- 161 MOSFET N-CH 30V 35A 1212-...
SIS434DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 35A PPAK ...
SIS406DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 9A 1212-8...
SIS410DN-T1-GE3 Vishay Silic... -- 114000 MOSFET N-CH 20V 35A PPAK ...
SIS430DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 25V 35A PPAK ...
SIS407DN-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 25A 1212-...
SIS472DN-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 30V 20A 1212-...
SIS454DN-T1-GE3 Vishay Silic... 0.33 $ 1000 MOSFET N-CH 20V 35A 1212-...
SIS476DN-T1-GE3 Vishay Silic... -- 90000 MOSFET N-CH 30V 40A 1212-...
SIS444DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 35A POWER...
SIS438DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 16A PPAK ...
SIS478DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A 1212-...
SIS456DN-T1-GE3 Vishay Silic... 0.33 $ 3000 MOSFET N-CH 30V 35A PPAK ...
SIS468DN-T1-GE3 Vishay Silic... 0.42 $ 1000 MOSFET N-CH 80V 30A 1212-...
SIS413DN-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 18A PPAK ...
SIS414DN-T1-GE3 Vishay Silic... -- 9000 MOSFET N-CH 30V 20A 1212-...
SIS488DN-T1-GE3 Vishay Silic... -- 3000 MOSFET N-CH 40V 40A 1212-...
SIS447DN-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 18A POWER...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics