| Allicdata Part #: | SIS424DN-T1-GE3-ND |
| Manufacturer Part#: |
SIS424DN-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 35A PPAK 1212-8 |
| More Detail: | N-Channel 20V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface... |
| DataSheet: |  SIS424DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 39W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 19.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SIS424DN-T1-GE3 is a type of transistor device specifically designed for surface mounting in applications. It is part of a family of specialized transistors, which are made of the two main varieties of field-effect transistors, or FETs — MOSFETs and JFETs — and are often referred to as single gate FETs. This type of transistor is uniquely designed for a variety of applications, including low voltage signal switching, radio frequency signal switching, and analog and digital circuit applications.The SIS424DN-T1-GE3 transistor is a single gate MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. It is part of the family of MOSFETs and is made on a silicon wafer with a doped substrate. This type of transistor uses a “channel” of electrons which are controlled by the gate. By applying electrical voltages to the source, drain, and gate, the electrons in the channel can be manipulated, allowing the transistor to act as a switch. The transistors can also be used to amplify voltages and currents by using an external power supply.The SIS424DN-T1-GE3 has a maximum on-state drain current of 7.4A and a maximum drain to source voltage of 30V. The on-resistance, which is the resistance of the device when it is in its highest current state, is as low as 130mΩ under certain conditions. The integrated gate capacitance is 40pF, which enables signal switching at high frequencies.The SIS424DN-T1-GE3 transistor can be used for a variety of applications, including signal switching for radio frequency signal switching, low voltage applications, and analog and digital circuit applications. It can also be used as a power transistor, with its high current-handling capabilities able to control high-current loads.The SIS424DN-T1-GE3 is especially useful in low voltage signal switching applications, as the transistor can be used to switch very small currents while maintaining high switching speeds. Additionally, the low on-resistance of the SIS424DN-T1-GE3 allows for more current to be passed, which can significantly reduce power losses. The integrated gate capacitance also enables the device to be used for high-speed signal switching, allowing for faster data throughputs and increased signal integrity.The SIS424DN-T1-GE3 is also useful for analog and digital circuit applications, as it is able to amplify voltages or currents and can control large loads when provided with an external power supply. The integrated gate capacitance ensures high-speed signal switching, which can make the device useful for applications such as instrumentation, data acquisition, and communication systems.In conclusion, the SIS424DN-T1-GE3 is a type of single gate MOSFET transistor specifically designed for surface mount applications. With its maximum on-state drain current of 7.4A, maximum drain to source voltage of 30V, and low on-resistance of 130mΩ, the SIS424DN-T1-GE3 is suitable for a variety of applications, including analog and digital circuits, low voltage signal switching, and power transistor usage. Its integrated gate capacitance also enables high-speed signal switching, allowing for fast data throughputs and increased signal integrity.
The specific data is subject to PDF, and the above content is for reference
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