SIS412DN-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 15.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	435pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	24 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Application Field and Working Principle of SIS412DN-T1-GE3

The SIS412DN-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a single drain, dual source, and a low operating temperature. It is designed to provide superior on/off current performance and temperature stability. The SIS412DN-T1-GE3 is ideal for applications where high reliability and compact size is needed, such as in automotive, industrial, and electronic applications.The working principle of the SIS412DN-T1-GE3 is based on the principles of field-effect transistors. A field-effect transistor is essentially a semiconductor device that is made of two conducting electrodes, the gate and the source, separated by an insulating layer, the oxide. When a voltage is applied to the gate, it creates an electric field, which modifies the conductivity of the channel, allowing current to flow between the source and the drain.The main advantage of the SIS412DN-T1-GE3 is its low operating temperature. When compared with other MOSFETs, it operates at temperatures up to 200°C lower. This makes it ideal for use in applications with higher power and higher thermal dissipation. Additionally, its high on/off current performance ensures that the MOSFET can handle larger currents without any degradation in performance.The SIS412DN-T1-GE3 is very easy to use and can be integrated into many existing circuits and projects. It is available in a variety of leadless packages and comes with an included datasheet that can be used for integration. Additionally, due to its widespread availability, application engineers across many industries can quickly and easily find the best solution for their specific application.Overall, the SIS412DN-T1-GE3 is a great choice for applications that require low temperatures, high on/off current performance, and easy integration. Its broad range of applications and easily obtainable datasheet make it a great pick for any design.

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