SIS410DN-T1-GE3

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The SIS410DN-T1-GE3 is a N-channel MOSFET, or metal-oxide-semiconductor field-effect transistor, from Brother Industries. A MOSFET is a field-effect transistor that is capable of switching and amplifying electronic signals. The SIS410DN-T1-GE3 is designed for a wide range of applications and can be used in a variety of systems.

The SIS410DN-T1-GE3 is a higher-power MOSFET that is designed for switching higher-current loads. It is a single-gate (D type) MOSFET, meaning it has one input terminal (a gate) and two output terminals (a source and a drain). The device is made from a silicon substrate with an insulated gate dielectric.

This MOSFET is ideally suited for applications that require higher-current switching capability, such as PWM circuits and motor drives. It is also used in applications such as motor speed control, DC/DC converters, and switched-mode power supplies.

The SIS410DN-T1-GE3 is an enhancement-mode device. This means that the threshold voltage is applied to increase the conductivity between the source and the drain. This makes it an ideal choice for switching high-current loads in low-voltage applications.

The device has an on-state resistance (RDS) of just 6 ohms (which is very low for a MOSFET) and an operating voltage of just 5.5V. The device also has a high voltage rating of 400V and a maximum peak current of 9A.

The device also has a wide operating temperature range of -55 to 150°C and is capable of withstanding high temperature pulsed loads of up to 100°C. The device also includes internal ESD protection and overvoltage protection, making it suitable for use in harsh environments.

The SIS410DN-T1-GE3 is a versatile MOSFET that can be used as a low-cost switch in many common applications. Its low resistance and power rating make it an attractive choice for applications that require higher currents. The internal protection circuits also make it suitable for use in harsh environments.

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