SIS468DN-T1-GE3

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The SIS468DN-T1-GE3 is a single N-Channel Enhancement Mode PowerMOSFET transistor that is extensively used in a variety of applications. The device is designed to be a direct replacement for any N-channel power MOSFET and offers a wide range of voltage and RDS(on) options, making it an ideal choice for a variety of power applications. This transitor is designed for use in a wide range of applications, including automotive, industrial, consumer, and renewable energy.

The SIS468DN-T1-GE3 transistor is built on an ultra-low Vt silicon substrate, offering excellent gate charge and low gate resistance. This device is a logic level power MOSFET, and offers a maximum drain-source voltage of 60V, making it useful in applications particularly where a low gate drive is required. The device also offers a maximum drain current of 5.5A and a low gate-to-source capacitance of 0.4PF, making it an ideal choice for high-power applications.

The SIS468DN-T1-GE3 is particularly useful in PFC (Power Factor Correction) applications, where it can handle higher power loads with less power dissipation. In addition, the device can be used as a driver in power transistors, where it is able to reduce switching losses. The device also works well in motor control, and is able to provide fast switching and excellent motor control, as well as reduce power dissipation.

The SIS468DN-T1-GE3 is a single N-Channel Enhancement Mode PowerMOSFET transistor and works by providing a low resistance path between the source and the drain. This path is typically created when the gate voltage reaches a certain threshold, and is referred to as the turn-on voltage. When a current is passed through the transistor, it acts as a switch in the circuit and provides a controlled voltage/current, depending on the application.

The SIS468DN-T1-GE3 is a reliable power MOSFET that provides excellent performance in a variety of applications. It is extremely versatile and can be used in a wide range of devices, from automotive and industrial systems to consumer and renewable energy applications. The device offers a wide range of voltage and RDS(on) options, low gate charge, and low gate resistance, making it an ideal choice for high-power applications.

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