SIS488DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIS488DN-T1-GE3 is a single N-channel, JFET (junction field-effect transistor) with a gate-drain breakdown voltage of -20V and a gate-source breakdown voltage of -15V. Its basic structure consists of two back-to-back PN junctions, forming two depletion mode MOSFETs connected in series with one being an N-channel and the other being a P-channel. This makes the SIS488DN-T1-GE3 a third-generation JFET. It is designed for low voltage and low power applications, and it is optimized for low noise and good matching.

The working principle of a JFET is relatively simple. When a positive voltage is applied to the gate of the JFET, the potential barrier between the gate and the source is reduced. This allows electrons to flow from the source to the drain. The amount of current flowing through the channel is controlled by the gate voltage, which in turn determines the resistance between the source and drain. This is called Drain-to-Source Voltage (VDS).

The SIS488DN-T1-GE3 can be used in a wide range of applications, such as high frequency amplifiers, signal buffers, power supply regulators, voltage converters, power switching and MOSFET controllers. It is particularly suitable for applications requiring low noise, low power, and high speed. In these applications, the SIS488DN-T1-GE3 provides superior performance in terms of power, noise, and speed. It can also be used for switching, amplifying, and rectifying signals.

The SIS488DN-T1-GE3 can also be used for power management. It can be used to control the switching of loads and for power regulation. Its low power requirements and low input capacitance make it ideal for power management applications. It is particularly suitable for switching applications, as it has low on-state resistance, fast turn-on times, and low gate-drain capacitance.

The SIS488DN-T1-GE3 is a great choice for applications that require low voltage and low power, as it offers superior performance in terms of noise, power, and speed. Its low gate-drain capacitance and fast switching make it ideal for use in power management and signal processing applications. It can also be used for switching and amplifying signals, as well as for rectifying signals.

The specific data is subject to PDF, and the above content is for reference