SUM10250E-GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SUM10250E-GE3TR-ND |
| Manufacturer Part#: |
SUM10250E-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 63.5A D2PAK |
| More Detail: | N-Channel 250V 63.5A (Tc) 375W (Tc) Surface Mount ... |
| DataSheet: |  SUM10250E-GE3 Datasheet/PDF |
| Quantity: | 1600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 375W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3002pF @ 125V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
| Series: | ThunderFET® |
| Rds On (Max) @ Id, Vgs: | 31 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 63.5A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SUM10250E-GE3 is a single N-channel MOSFET commonly used for switching applications. It utilizes the company’s Gen3 consolidation technology and features a low resistance states and fast switching speed.
The applications of SUM10250E-GE3 mainly include power conversion applications such as switching adaptor, motor control, AC/DC converters, battery charger, and solar inverter. It can also be used for UPS, server, storage equipment, motor controllers, lighting, and telecommunication systems.
This MOSFET is highly competitive in terms of cost, performance and size. It also offers higher performance than previous generations of power MOSFETs. The device also uses reduced-level stresses and low switching speeds to reduce power consumption. In addition, it is able to cope up with harsh environmental conditions of operation and can operate in temperature ranges from -40°C to 125°C.
The basic working principle of SUM10250E-GE3 is to control the flow of current between source and drain via a gate terminal. In the off state, no current flows through the device. To turn the device on, a voltage must be applied to the gate terminal, thus attracting electrons from the source terminal to the gate. This creates a channel between the source and drain terminal and enables current to flow through the device.
Once the voltage is removed from the gate terminal, the charge carriers are repelled from the gate, thus stopping the flow of current. This makes the MOSFET an ideal switch for controlling the current in a circuit.
SUM10250E-GE3 is an excellent choice for a wide range of switching applications. Its high performance, low cost, reduced size and environmental resilience make it suitable for numerous applications. Additionally, its simple working principle makes it easy to use.
The specific data is subject to PDF, and the above content is for reference
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| SUM120N04-1M7L-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 120A D2PA... |
| SUM110P04-04L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 110A D2PA... |
| SUM110N06-3M9H-E3 | Vishay Silic... | -- | 21 | MOSFET N-CH 60V 110A D2PA... |
| SUM110P06-07L-E3 | Vishay Silic... | -- | 2 | MOSFET P-CH 60V 110A D2PA... |
| SUM110P06-08L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 110A D2PA... |
| SUM110P08-11L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 110A D2PA... |
| SUM110P04-05-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 110A D2PA... |
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