SUM110P06-08L-E3 Discrete Semiconductor Products |
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| Allicdata Part #: | SUM110P06-08L-E3TR-ND |
| Manufacturer Part#: |
SUM110P06-08L-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 110A D2PAK |
| More Detail: | P-Channel 60V 110A (Tc) 3.75W (Ta), 272W (Tc) Surf... |
| DataSheet: |  SUM110P06-08L-E3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D2Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 272W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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SUM110P06-08L-E3 is a type of short-channel, low-threshold voltage, and low-power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This device is designed for the miniaturized end-user systems that require the basic size and good complementarity of two Input/Output (I/O) switches (such as for Logic Level). The SUM110P06-08L-E3 is built with a single thin-film junction. It uses metal gates to control the electric current. The metal gate is more efficient than traditional silicon gates as it can switch much faster.This is due to the low gate-drain capacitance and low input capacitance of the metal gate which leads to a higher speed of operation.The device allows the power MOSFET to dissipate less power than a normal transistor. This is because the metal gate can switch faster than the traditional silicon gate. This makes the device more power efficient, as it can make more efficient switches. The thin-film junction allows the device to make a uniform connection to the silicon substrate. This ensures a low threshold voltage, which leads to a lower on-state resistance. This is also beneficial for power efficiency. The low resistance also helps reduce EMI (electromagnetic interference).The device has two basic operation modes. The first is Direct Current (DC) Mode, which is commonly used for driving loads. This mode uses the voltage applied to the gate-source terminal to turn the device on or off. This mode has low input capacitance, high power dissipation rating and low gate-drain capacitance. The second mode is Pulse Width Modulation (PWM) Mode, which is commonly used for high frequency control. In PWM Mode, the device uses pulses to vary the voltage applied to the gate-source terminal to turn the device on or off. This mode is more efficient than the DC Mode, as it has higher power dissipation ratings and lower gate-drain capacitance. The SUM110P06-08L-E3 is used in many different application fields including power electronics, motor control, automotive electronics, computing and communications, and consumer electronic products. In power electronics, it is used in applications such as home appliances and power systems and in motor control, it is used in applications such as elevators and electric vehicles. In automotive electronics, it is used in ABS brakes and traction control systems. In computing and communications, it is used in applications such as network switches and memory address decoding. In consumer electronics, it is used in cell phones, TV, air-conditioners, and washing machines. In summary, the SUM110P06-08L-E3 is a type of low-threshold voltage and low-power MOSFET. It is used in various application fields, such as power electronics, motor control, automotive electronics, computing and communications, and consumer electronic products. It has two basic operation modes, DC Mode and PWM Mode, which are beneficial for power efficiency. The thin-film junction of the device ensures a low on-state resistance, reducing EMI and increasing power efficiency.
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