SUM110N04-03-E3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (D2Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8250pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	250nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	2.8 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SUM110N04-03-E3 is a type of single n-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs have become a dominant type of transistor in modern integrated circuits, forming an interface between digital logic signals and analog signals. This MOSFET has been designed to provide excellent low-frequency characterization, extremely low on-state resistance, minimal device capacitance, and superior protection against electrostatic discharge damage.

Design

The SUM110N04-03-E3 is a 100V single n-channel enhancement mode MOSFET with a maximum continuous drain current rating of 11A. It has been designed with a special low gate charge construction, which helps it to provide excellent low frequency characteristics and extremely low on-state resistance. The device has a minimum breakdown voltage of 100V and an ultra-low gate charge rating of 15nC. In addition, the device has a maximum gate source voltage rating of ±20V, and the package has a total Gate-Source capacitance of 0.052pF.

Applications

The SUM110N04-03-E3 is suitable for a variety of applications, including low voltage power supply designs, DC-to-DC converters, power switching circuits, and motor control systems. It is particularly well-suited for applications that require high current transfer and low on-state resistance, such as DC-DC converters and high power switching circuits. The device also provides excellent ESD protection and low capacitance, making it an ideal choice for power supply design.

Working Principle

The SUM110N04-03-E3 works according to the principles of operation for a MOSFET. MOSFETs operate by modulating the width of a conducting channel between the source and drain terminals. This is achieved by applying a voltage between the gate and source that creates an electric field. When the voltage applied to the gate is sufficiently high, the field will cause electrons to fill the channel, thus allowing current to flow between the source and drain. The width of the conductive channel is proportional to the gate voltage, allowing the resistance between the source and drain to be finely adjusted. This allows the device to control current in a variety of applications.

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