SUM120N04-1M7L-GE3

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The SUM120N04-1M7L-GE3 is a single N-channel Trench MOSFET device made with highly reliable Magnachip\'s advanced trench-gate structure, providing superior RDS(on), low gate charge, and efficient switching performance. It is had a 3Vdrive rated at 125°C. It is designed to minimize the power losses in switching applications. This MOSFET is highly suited for high frequency power switches, DC/DC converters, automotive DC/AC inverters, general low voltage switching applications, and DC motors.

The working principle of the SUM120N04-1M7L-GE3 can be broken down into four different stages. First, the gate insulation layer between the metal gate and the semiconductor substrate (made from silicon) is highly insulating. When a voltage is applied to the gate, current will start to flow through the channel enabiling the passage of electrons. Secondly, a process known as "inversion layer formation" occurs, causing the substrate and the metal gate to be at the same potential. This reduces the drain to source resistance, thus allowing for better switching performance. Thirdly, the positive charge on the metal gate causes electrons to be attracted to it, thus further reducing the resistance of the drain to source channel. Lastly, the electrons flow through the channels and the metal gate, completing the switching process.

The SUM120N04-1M7L-GE3 is an ideal component for applications that require a high degree of efficiency and numerous switching operations. Its superior RDS(on) and low gate charge makes it ideal for applications requiring high frequency switching such as DC/DC converters and switched-mode power supplies. In addition, the reliable trench gate structure of the device provides excellent switching performance, making it well-suited for applications requiring rapid switching such as automotive DC/AC inverters, DC motors, and general low voltage switching applications.

Overall, the SUM120N04-1M7L-GE3 is an ideal component in applications requiring a combination of high frequency switching, high efficiency, and numerous switching operations. Its high level of efficiency and low gate charge makes it an ideal choice for high frequency switching applications, while its reliable trench gate structure provides robust switching performance. This makes it well-suited for applications such as DC/DC converters, switched-mode power supplies, automotive DC/AC inverters, DC motors, and general low voltage switching applications.

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