SUM110P08-11L-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM110P08-11L-E3TR-ND |
Manufacturer Part#: |
SUM110P08-11L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 80V 110A D2PAK |
More Detail: | P-Channel 80V 110A (Tc) 13.6W (Ta), 375W (Tc) Surf... |
DataSheet: | SUM110P08-11L-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 13.6W (Ta), 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10850pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SUM110P08-11L-E3 is a type of FET (field-effect transistors) and MOSFET (metal-oxide-semiconductor field-effect transistors) which is categorized as a single device. FETs and MOSFETs are two types of transistors and they both work in a similar way. The main difference between them is in the type of conducting material that is used.
The SUM110P08-11L-E3 is a lower resistance package MOSFET and is designed for applications that need high current as well as low on-resistance and good thermal characteristics. It has two main drain sources, a gate and a source, and can handle up to 6.5 Amps of peak current.
The working principle of the SUM110P08-11L-E3 is the same as that of other field-effect transistors and MOSFETs. It controls the current flow in the circuit between the source and the drain by using an electrical field. When an external voltage is applied to the gate, it either creates an induced electric field (in the case of FETs) or a depletion region (in the case of MOSFETs). This electric field or region acts as a barrier which either increases or decreases the current in the circuit, depending on its size.
The SUM110P08-11L-E3 is used in a variety of applications, including motor controls, power supplies, inverters, and switch-mode power supplies. It is well suited for these applications due to its low on-resistance and good thermal characteristics. It is also used in motors and controllers, such as AC and DC drives. Additionally, it is used in high-frequency switching circuits and can work at frequencies up to 1MHz.
In summary, the SUM110P08-11L-E3 is an FET and MOSFET device that belongs to the Single category. It has a dual drain-source structure, a gate, and can handle up to 6.5 Amps of peak current. Its working principle is the same as that of other FETs and MOSFETs, which is to control the current flow in the circuit between the source and the drain by using an electric field or depletion region. This device is well-suited for applications like motor controls, power supplies, and inverters, as well as for high-frequency circuits that require up to 1Mhz of frequency.
The specific data is subject to PDF, and the above content is for reference
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