SUM110N04-04-E3 Allicdata Electronics
Allicdata Part #:

SUM110N04-04-E3TR-ND

Manufacturer Part#:

SUM110N04-04-E3

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 110A D2PAK
More Detail: N-Channel 40V 110A (Tc) 3.75W (Ta), 250W (Tc) Surf...
DataSheet: SUM110N04-04-E3 datasheetSUM110N04-04-E3 Datasheet/PDF
Quantity: 1000
800 +: $ 1.14108
Stock 1000Can Ship Immediately
$ 1.27
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
FET Feature: --
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The SUM110N04-04-E3 is an advanced high-performance enhancement mode Power MOSFET. It is one of the most popular types of MOSFETs and is used in a variety of analog and digital circuits. It is an extremely versatile transistor because of its wide range of applications and the ability to use it in many different ways.

The SUM110N04-04-E3 is a single-channel enhancement-type MOSFET. It has an input capacitance of 110pF and can be used for high-speed switching applications. Its maximum drain current is 4A and its on-state resistance is 13.2Ω at 2.5V. The device also has a maximum drain-source voltage rating of 60V.

This is an enhancement-mode power MOSFET, which means that it is operated in an “on” state when a voltage is applied to the gate. This type of transistor is used for both analog and digital circuits. In analog circuits, the MOSFET can be used as a voltage controlled current source, a voltage modulator, a resistor and a switch.

In digital circuits, the MOSFET is used to control the flow of signals from one logic stage to the next. It can be used to turn on and off digital switches, and it can be used to create logic gates. It is also commonly used in PWM (pulse width modulation) applications to control the speed of certain electrical motors.

The SUM110N04-04-E3 has low on-state and off-state losses and a very low reverse bias leakage current. These characteristics make it ideal for power management circuits. It is also used in sensitive circuit protection applications.

The SUM110N04-04-E3 is an excellent choice for a wide range of applications and has many advantages over other types of transistors. It is lower in cost, has a wide variety of uses, and has low on-state and off-state losses. In addition, its high gate impedance makes it an ideal choice for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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