SUM110N05-06L-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM110N05-06L-E3CT-ND |
Manufacturer Part#: |
SUM110N05-06L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 55V 110A D2PAK |
More Detail: | N-Channel 55V 110A (Tc) 3.7W (Ta), 158W (Tc) Surfa... |
DataSheet: | SUM110N05-06L-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 158W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The SUM110N05-06L-E3 is a field-effect transistor (FET) specifically aimed at offering excellent performance in power systems. A FET is composed of an insulated gate and a drain and source, and usually respond to the voltage applied across the gate to control current flow between the drain and source. The SUM110N05-06L-E3 is a single FET with a maximum drain current of 110Amps and a maximum drain source voltage of 600V. This makes it ideal for power system applications such as motor control, power distribution, and power supply.
In a typical application, the gate is used as the input, the source is the output, and the drain acts as the power input. The SUM110N05-06L-E3 has an additional advantage of a shut-off feature. When the input voltage is applied to the gate, the transistor is open, allowing current flow. When the input voltage is removed, the transistor shuts off, isolating the source and drain. This makes the SUM110N05-06L-E3 ideal for use in applications where a switch needs to be closed or opened quickly and accurately.
The operation and component of a FET are based on the principle of the application of an electric field. The applied electric field is used to control the desired operation of the FET. By controlling the electric field, the transistor operations can be manipulated. In the SUM110N05-06L-E3, the field is employed to control the amount of current flow from the source to the drain. The magnitude of current flow is dependant upon the voltage applied to the gate. A reduction in the gate voltage reduces the amount of electrons entering the FET channel, resulting in a reduction of current flow.
The SUM110N05-06L-E3 is most widely used in the automotive and industrial markets. In the automotive sector, it is used for various motor controls, including power steering and airbag systems. In industrial applications, the transistor is used in power distribution systems, adjustable frequency drives, power supplies, and data acquisition. The FET also finds uses in a variety of consumer electronics, such as televisions and game consoles.
The SUM110N05-06L-E3 is a versatile single FET that is beneficial for a multitude of power systems applications. By using the principles of an electric field to control current flow, the FET is capable of providing precise and repeatable operation. Furthermore, its shut-off feature ensures that the device works in both the open and closed positions. For these reasons, the SUM110N05-06L-E3 is well suited for use in a variety of automotive and industrial power systems.
The specific data is subject to PDF, and the above content is for reference
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