Allicdata Part #: | SUM110N04-03P-E3TR-ND |
Manufacturer Part#: |
SUM110N04-03P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 110A D2PAK |
More Detail: | N-Channel 40V 110A (Tc) 3.75W (Ta), 375W (Tc) Surf... |
DataSheet: | SUM110N04-03P-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 375W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The SUM110N04-03P-E3 is a high-performance, high-voltage, all-round N-channel enhancement-mode power field effect transistor. It is designed to offer superior on-state resistance and excellent avalanche performance, making it ideal for use in applications such as motor control, DC-DC converters, renewable energy, low-voltage and high-current automotive systems, and portable power systems.
The SUM110N04-03P-E3 has a wide operating voltage range of 8 to 80 volts, with a maximum drain current rating of 10 amps. It is available in a TO-220 or DPAK-style package, with various gate configurations that allow flexibility for designers. This device uses an ultra-low on-state resistance to maximize energy efficiency in its operation, making it an ideal choice for high-efficiency applications.
The key feature of the SUM110N04-03P-E3 is its low thermal resistance, which enables the transistor to dissipate significant amounts of power without heating up. This helps the device to meet requirements for environmental protection in applications such as automotive, lighting, and solar applications. Because the transistor does not require a bias voltage, it is well-suited for low-voltage applications.
The SUM110N04-03P-E3 transistor works on the principle of enhancing a channel between the source and the drain when a voltage is applied to the gate. This creates a conducting channel, allowing current to flow between the source and drain. The gate voltage can be adjusted to control the flow of current, making the device ideal for applications such as load-switching and motor control. Depending on the gate voltage and the amount of current flowing through the device, it may be able to support the circulation of both AC and DC currents.
The SUM110N04-03P-E3 is an excellent choice for a variety of applications requiring high-voltage, high-current capability and fast switching. It is suitable for use in DC-DC converters, motor control, power management and energy conversion systems, low-voltage and high-current automotive applications, and portable power systems. This device is ideal for applications that require a low on-state resistance for maximum efficiency, as well as high levels of environmental protection.
The specific data is subject to PDF, and the above content is for reference
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