SUM110N03-04P-E3 Discrete Semiconductor Products

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The SUM110N03-04P-E3 is a single-gate, depletion mode power MOSFET that is highly efficient, versatile, and cost-effective. It is widely used in a variety of applications due to its low “on-resistance” and high voltage ratings.

The SUM110N03-04P-E3 features an “enhanced” threshold voltage of 4V which makes it well suited for horizontal deflection circuitry in large screen television applications. Its low “on” resistance of 0.8Ω and the corresponding low “off” resistance of 0.06Ω help to deliver high power efficiency and high frequency switching. It also features a reverse voltage rating of 10V, which makes it suitable for low-power supply applications.

The power MOSFET is constructed using proprietary materials and processes which provide excellent performance in a wide range of medium- and high-voltage applications. Its outstanding electrical characteristics such as fast switching, low on-resistance, low “off” resistance, and high reverse voltage rating make it an ideal choice for medium- and high-voltage applications. Its low power consumption and excellent protection from electrostatic discharge makes it suitable for mobile and handheld applications as well.

The SUM110N03-04P-E3 operates in a single-gate mode and its design is tailored to deliver excellent power efficiency. Most of its electrical properties are determined by its gate voltage and drain current. When the gate is forward-biased, its coupling capacity (Ciss) decreases, which makes it more suitable for low-power industrial applications. When the gate is reverse-biased, its gate capacitance (Cgs) increases, which makes it more suitable for high-frequency applications.

The MOSFET also features an exceptionally low input capacitance. This helps reduce the power loss associated with the device, which in turn helps improve efficiency. Additionally, the device has an extremely low “turn-on” resistance that further enhances efficiency.

The SUM110N03-04P-E3 is designed to handle high current pulses with minimal switching loss. Its low gate charge and low gate resistance help reduce gate ringing, which helps reduce the associated power loss. The device features a high thermal resistance, which helps to ensure that its maximum operating temperature is not exceeded. This makes it an ideal choice for high-temperature applications.

The SUM110N03-04P-E3 is a versatile and highly efficient MOSFET, and is an excellent choice for a variety of medium- and high-voltage applications. Its low input capacitance, low “on” resistance, and high reverse voltage rating make it a great choice for low-power supply applications. Additionally, its low gate charge and low gate resistance make it ideal for high-frequency applications. Its exceptional thermal resistance also makes it suitable for high-temperature applications. All of these features make it an ideal device for many industrial and consumer applications.

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