SUM18N25-165-E3 Discrete Semiconductor Products

The SUM18N25-165-E3 is part of the N-Channel MOSFET family, specifically a single-channel enhancement type. It is a power electronic device commonly used in high power, high-end audio applications. This MOSFET is produced using logic level technology, which has a fully enhanced FET better suited to logic level, high-power switching applications.

The SUM18N25-165-E3 is a P-channel enhancement-type MOSFET with a maximum voltage rating of 24 volts (Vdss) and a current rating of up to 1.65 amps (ID). This MOSFET is designed for low-voltage switching applications that do not require a large driving force. Its small size and low cost make it ideal for consumer electronics applications such as laptop and mobile phone charging.

The sum18N25-165-E3 has a maximum on-resistance rating of 0.33 Ohms, which is relatively low compared to other Mosfets of this type. It also has a relatively low power dissipation of 0.360 watts, making it suitable for applications requiring low power consumption. In addition, this MOSFET has a breakdown voltage of 24 volts, which makes it well-suited for use in applications requiring high voltage switching.

The sum18N25-165-E3 has a threshold voltage of 0.7 volts (Vt) and a gate-source voltage of 2 volts (Vgs). This makes it ideal for driving high-flexing applications (i.e., switching applications that are powered by a relatively large input signal). Furthermore, its low gate-source voltage makes it suitable for use in applications requiring fast switching, such as high-speed digital logic circuits.

The sum18N25-165-E3 is suitable for a wide range of applications such as motor control, DC-DC converters, power supplies, lighting and other high-power applications. It is also suitable for low-voltage switching applications that require low-power, reliable and fast switching.

The working principle of the sum18N25-165-E3 is based on a principle known as the body-effect. When a voltage is applied across its gate-source, an electric field is created between the gate and source, which induces a current within the body of the MOSFET. This current then creates a voltage drop within the body, which results in a reduction in the gate-source voltage and an increase in the on-resistance of the MOSFET.

The sum18N25-165-E3 is ideal for use in low-power, high-flexing switching applications. It is well suited for applications that require fast switching and low power consumption. Its small size and low cost make it a popular choice for consumer electronics applications such as laptop and mobile phone charging.