SUM110N04-2M3L-E3 Discrete Semiconductor Products

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The SUM110N04-2M3L-E3 is a power MOSFET that belongs to the family of field-effect transistors (FETs). It is a single, totem-pole of N- and P-channel MOSFETs designed for switched-mode power supply (SMPS) and Audio Frequency (AF) amplifier applications. The SUM110N04-2M3L-E3 is ideal for cascode FET bias circuits, high-side switching applications and synchronous rectifier stages in SMPS.

The power MOSFET has a fast, soft switching characteristics that enables it to reduce EMI and to reduce system design time. The low gate charge minimizes the power dissipation and the wide drain-source voltage range makes it suitable for a variety of applications. The power MOSFET has a low on-resistance which enables it to handle large current and provides switching speeds.

The SUM110N04-2M3L-E3 also features a rugged Poly-Si gate oxide technology and a wide range of gate threshold voltage range that provides excellent power output and lower power dissipation. The gate oxide also provides superior ESD resistance for better protection during handling and hot-swap applications.

The power MOSFET has a maximum drain-source voltage of 100V and a maximum drain current of 16A. It also has a maximum power dissipation range of 550 mW to 1 W. The device has an RDS(on) of 2.7 Ohms at VDS = 10V. It operates over a wide temperature range of -40°C to 150°C.

The working principle of the SUM110N04-2M3L-E3 can be explained using the basics of FET operation. It is constructed with a channel between the drain and source that is controlled by an electric field. The gate-source voltage is applied to control the current flowing through the channel. By controlling the gate-source voltage, the current through the channel can be adjusted. The channel carries the current from the drain to the source and is formed by the negative charges of electrons in the channel.

The device operates in the enhancement mode, which means that the transistor is normally “off” and the channel remains pinched off until the gate voltage is applied. When the gate voltage is applied, the channel is opened, allowing current to flow through the device. This type of operation is beneficial in applications where the switching time is critical such as SMPS and AF amplifier.

In addition to being used as a power MOSFET, the SUM110N04-2M3L-E3 can be used in a variety of applications that require high power output and low power dissipation. It is an ideal device for switching applications, high-side switching applications, and synchronous rectifier stages in SMPS. It can also be used in audio frequency (AF) amplifier applications for providing high power output with low noise.

In conclusion, the SUM110N04-2M3L-E3 is a power MOSFET that is ideal for a variety of applications that require high power input, low power dissipation and frequent switching. It operates on the principle of FETs and is designed for switched-mode power supply (SMPS) and Audio Frequency (AF) amplifier applications. The device features a wide range of gate threshold voltage and fast soft switching characteristics which make it an ideal choice for a variety of applications.

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