SUM110N10-09-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM110N10-09-E3TR-ND |
Manufacturer Part#: |
SUM110N10-09-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 110A D2PAK |
More Detail: | N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Sur... |
DataSheet: | SUM110N10-09-E3 Datasheet/PDF |
Quantity: | 6400 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The S%M110N10-09-E3 is a single power MOSFET with a variety of features that make it ideal for use in high voltage, high current applications. It has an on-resistance of 110A and is rated for up to 600V. It is a n-channel device, meaning that it is optimised for higher current flow from the gate to the source than the reverse. It has a breakdown voltage of 900V and a maximum drain-source current of 55A continuous.
One of the applications that the S%M110N10-09-E3 can be employed in is switching electrical loads in motor control systems. By controlling the voltage or current in the load, a motor can be regulated to run at its desired speed. This MOSFET is suitable for such applications due to its low on-resistance and its ability to carry large currents and voltage. Furthermore, its high breakdown voltage means it is suitable for operating at high voltages and its fast switching capability makes it a good choice for switching the motor.
The S%M110N10-09-E3 also finds use in automotive applications. Its low on-resistance characteristics make it suitable for use as part of an output stage for car audio power amplifiers. Its high voltage and current capabilities also means that it can be used as a switching device in automotive battery chargers. This can be done by controlling the current supplied to the charger in order to prevent overcharging.
The working principle of the S%M110N10-09-E3 is similar to that of other MOSFETs. It uses three terminals, the source, the drain, and the gate. The source and drain are connected to the two sides of a circuit and the gate is connected to the control circuit. When a voltage is applied to the gate, the MOSFET\'s internal electrical resistance is changed. This allows the current to flow between the source and drain. The magnitude of the current is determined by the voltage difference between the source and drain, as well as the saturation current of the MOSFET.
The S%M110N10-09-E3 is a versatile device with a variety of applications. It is commonly used for motor control in industrial and automotive systems, as well as in high power audio amplifiers. Its low resistance, high voltage, and high current capabilities make it an ideal choice for such applications. Furthermore, its working principle is similar to other MOSFETs, making it easy to use.
The specific data is subject to PDF, and the above content is for reference
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