SUM110N10-09-E3 Allicdata Electronics

SUM110N10-09-E3 Discrete Semiconductor Products

Allicdata Part #:

SUM110N10-09-E3TR-ND

Manufacturer Part#:

SUM110N10-09-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 110A D2PAK
More Detail: N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Sur...
DataSheet: SUM110N10-09-E3 datasheetSUM110N10-09-E3 Datasheet/PDF
Quantity: 6400
Stock 6400Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S%M110N10-09-E3 is a single power MOSFET with a variety of features that make it ideal for use in high voltage, high current applications. It has an on-resistance of 110A and is rated for up to 600V. It is a n-channel device, meaning that it is optimised for higher current flow from the gate to the source than the reverse. It has a breakdown voltage of 900V and a maximum drain-source current of 55A continuous.

One of the applications that the S%M110N10-09-E3 can be employed in is switching electrical loads in motor control systems. By controlling the voltage or current in the load, a motor can be regulated to run at its desired speed. This MOSFET is suitable for such applications due to its low on-resistance and its ability to carry large currents and voltage. Furthermore, its high breakdown voltage means it is suitable for operating at high voltages and its fast switching capability makes it a good choice for switching the motor.

The S%M110N10-09-E3 also finds use in automotive applications. Its low on-resistance characteristics make it suitable for use as part of an output stage for car audio power amplifiers. Its high voltage and current capabilities also means that it can be used as a switching device in automotive battery chargers. This can be done by controlling the current supplied to the charger in order to prevent overcharging.

The working principle of the S%M110N10-09-E3 is similar to that of other MOSFETs. It uses three terminals, the source, the drain, and the gate. The source and drain are connected to the two sides of a circuit and the gate is connected to the control circuit. When a voltage is applied to the gate, the MOSFET\'s internal electrical resistance is changed. This allows the current to flow between the source and drain. The magnitude of the current is determined by the voltage difference between the source and drain, as well as the saturation current of the MOSFET.

The S%M110N10-09-E3 is a versatile device with a variety of applications. It is commonly used for motor control in industrial and automotive systems, as well as in high power audio amplifiers. Its low resistance, high voltage, and high current capabilities make it an ideal choice for such applications. Furthermore, its working principle is similar to other MOSFETs, making it easy to use.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SUM1" Included word is 22
Part Number Manufacturer Price Quantity Description
SUM110N03-04P-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 110A D2PA...
SUM110N05-06L-E3 Vishay Silic... -- 1000 MOSFET N-CH 55V 110A D2PA...
SUM110N08-07P-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 75V 110A D2PA...
SUM110N03-03P-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 110A D2PA...
SUM110N04-03-E3 Vishay Silic... -- 1000 MOSFET N-CH 40V 110A D2PA...
SUM110P08-11-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 80V 110A D2PA...
SUM110N04-2M3L-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 40V 110A D2PA...
SUM110N06-3M4L-E3 Vishay Silic... -- 3462 MOSFET N-CH 60V 110A D2PA...
SUM110N04-05H-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 40V 110A D2PA...
SUM18N25-165-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 250V 18A D2PA...
SUM120N04-1M7L-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 120A D2PA...
SUM110P04-04L-E3 Vishay Silic... -- 1000 MOSFET P-CH 40V 110A D2PA...
SUM110N06-3M9H-E3 Vishay Silic... -- 21 MOSFET N-CH 60V 110A D2PA...
SUM110P06-07L-E3 Vishay Silic... -- 2 MOSFET P-CH 60V 110A D2PA...
SUM110P06-08L-E3 Vishay Silic... -- 1000 MOSFET P-CH 60V 110A D2PA...
SUM110P08-11L-E3 Vishay Silic... -- 1000 MOSFET P-CH 80V 110A D2PA...
SUM110P04-05-E3 Vishay Silic... -- 1000 MOSFET P-CH 40V 110A D2PA...
SUM10250E-GE3 Vishay Silic... -- 1600 MOSFET N-CH 250V 63.5A D2...
SUM110N10-09-E3 Vishay Silic... -- 6400 MOSFET N-CH 100V 110A D2P...
SUM110N04-04-E3 Vishay Silic... 1.27 $ 1000 MOSFET N-CH 40V 110A D2PA...
SUM110N04-03P-E3 Vishay Silic... -- 1000 MOSFET N-CH 40V 110A D2PA...
SUM110N04-2M1P-E3 Vishay Silic... -- 19 MOSFET N-CH 40V 29A D2PAK...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics