SUM110N04-2M1P-E3 Discrete Semiconductor Products

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	29A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.1 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	360nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	18800pF @ 20V
FET Feature:	--
Power Dissipation (Max):	3.13W (Ta), 312W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D2Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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SUM110N04-2M1P-E3 is a silicon N-channel enhancement mode field effect transistor (FET) manufactured by Vishay. It is used in a variety of applications, from light switching to communication systems, due to its low ON-resistance and fast switching times. In this article, we will discuss the application fields and working principle of the SUM110N04-2M1P-E3.ApplicationsSUM110N04-2M1P-E3 is an ideal choice for a wide range of applications. As it has a low ON-resistance, it is ideal for switching applications where low power consumption is important, such as light dimmers or motor control. As it can operate at high frequencies and has a fast switching time, it is often used in communication systems, such as radio frequency (RF) applications.In addition, it is also suitable for unipolar switching applications, such as switching LED lighting. Due to its low drive current requirements, it can be used in battery-operated systems. In addition, it can be used in high voltage applications, such as power supplies and motor controllers.Working PrincipleThe SUM110N04-2M1P-E3 is a N-channel FET, which means that the current is conductive when an N-type material is used as the gate material. It works on the principle of voltage control, meaning that when a voltage is applied to the gate electrode, the N-channel forms between source and drain.As the gate voltage increases, the width of the N-channel increases, which results in a greater current flow between the source and drain. This is known as the enhancement mode, which is the main operation mode for most FETs.In addition, the SUM110N04-2M1P-E3 also has a built in protection feature, which is a low-voltage Zener diode connected between the gate and source. This prevents the gate from exceeding a certain voltage, which helps to prevent damage to the device.ConclusionThe SUM110N04-2M1P-E3 is an ideal choice for a variety of applications. It has a low ON-resistance, fast switching times and a low drive current requirement, which make it suitable for a range of applications, such as light switching, motor control and communication systems. In addition, it has built in protection features which help to prevent damage to the device.

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