SUM110N06-3M4L-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM110N06-3M4L-E3TR-ND |
Manufacturer Part#: |
SUM110N06-3M4L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 110A D2PAK |
More Detail: | N-Channel 60V 110A (Tc) 3.75W (Ta), 375W (Tc) Surf... |
DataSheet: | SUM110N06-3M4L-E3 Datasheet/PDF |
Quantity: | 3462 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 12900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 375W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are among the most commonly integrated components. The SUM110N06-3M4L-E3 is a single power MOSFET engineered for use in an application with a wide range of load requirements. Despite its diminutive size, the SUM110N06-3M4L-E3 can be used to transfer high amounts of energy efficiently, making it a powerful tool in applications where its capabilities are best leveraged. This article will discuss the operational principles of the SUM110N06-3M4L-E3, as well as some of the applications where it would be most beneficial.
At its core, the SUM110N06-3M4L-E3 is a voltage-controlled device, meaning that its drain current flow is determined by the voltage levels at its two control gates—the source and gate terminals. By changing the ratio of the applied voltages, one can control the amount of current that flows from the drain to the source. Since the available gate-source voltage (VGS) is the primary factor in determining the amount of current that flows, the SUM110N06-3M4L-E3 is referred to as an enhancement-mode MOSFET.
The current (IDS) that flows through the device can be determined by the following equation:
IDS = KP [(VGS - VTH)2/2VDS]
where KP is the static drain-to-source transconductance coefficient, VGS is the gate-to-source voltage, VTH is the threshold voltage, and VDS is the drain-to-source voltage.
The main electrical characteristics of the SUM110N06-3M4L-E3 make it ideal for a variety of applications. As a relatively low-voltage device, the SUM110N06-3M4L-E3 works best in applications that require a low to medium power input, such as DC/DC converters and battery chargers. In addition, its wide range of static drain-source resistance values make it suitable for low-side switching applications, such as DC motor control. In automotive applications, the property of the SUM110N06-3M4L-E3 to handle high currents with a low gate-source voltage makes it ideal for resonant converters, such as the SR (soft-switching) converter.
The SUM110N06-3M4L-E3 also has a low operating temperature, allowing it to be used in other applications that require efficient heat dissipation. This makes it suitable for applications such as high-end audio amplifiers and LED driver circuits, where high power efficiency and thermal stability are paramount. Finally, the device’s on-state resistance and gate-source capacitance values make it suitable for RF applications, such as RF amplifiers, mixers, and switches.
Despite its small size, the SUM110N06-3M4L-E3 is a powerful and versatile device, capable of handling a wide range of applications. Its combination of low-voltage and high-power capability, along with its low operating temperature and wide range of static drain-source resistance values, make it perfect for a variety of low- and medium-power applications. Its versatility and ability to handle high-frequency signals also means that it can be used in both audio and RF applications. As such, the SUM110N06-3M4L-E3 is an excellent choice for applications ranging from DC/DC converters and battery chargers to RF amplifiers and LED driver circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SUM110N03-04P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 110A D2PA... |
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SUM110N03-03P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 110A D2PA... |
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SUM110P08-11L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 110A D2PA... |
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