SUM110N06-3M9H-E3 Discrete Semiconductor Products

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	300nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	15800pF @ 25V
FET Feature:	--
Power Dissipation (Max):	3.75W (Ta), 375W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D2Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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SUM110N06-3M9H-E3 application field and working principle

Introduction

SUM110N06-3M9H-E3 is a single-gate insulated-gate field-effect transistor (IGFET) commonly known as a MOSFET. It is manufactured by Sumitomo Electric Industries and provides a wide range of applications due to its small size and versatility. This paper will discuss the MOSFET\'s working principle, application field and its features.

How Does It Work?

The SUM110N06-3M9H-E3 works through two primary components: the gate and the channel. The gate resides between the source and the drain and is typically made of doped silicon. A gate voltage is then applied to the gate, which triggers a flow of electrons or holes between source and drain (depending if it\'s a p-channel or n-channel model respectively). Depending on the value of the voltage, one of two operating modes is employed: enhancement mode on or depletion mode on.

Application Field

Due to its small size and high power output, the SUM110N06-3M9H-E3 can be applied in a variety of fields. It is most commonly used in power electronics and automotive applications, as well as industrial automation and others. It is also used in the control of light emitting diodes (LEDs) and signal isolations, due to its low input capacitance.

Features

The SUM110N06-3M9H-E3 comes with a variety of features that make it an attractive choice for certain applications. It has a very low input capacitance, allowing it to remain highly responsive even when dealing with high frequency signals. It also has a low on-state resistance, which makes it suitable for applications with high power requirements. In addition, its wide operating temperature range and high blocking voltage further enhance its overall capabilities.

Conclusion

The SUM110N06-3M9H-E3a single-gate insulated-gate field-effect transistor is a versatile, small-sized device with a myriad of features. It performs well in the control of light emitting diodes and signal isolations, as well as automation and power electronics applications. It has a low input capacitance, a low on-state resistance, a wide operating temperature range and a high blocking voltage. Above all, it is sure to provide reliable performance in any application.

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