SUM110P06-07L-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (D2Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	345nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	6.9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SUM110P06-07L-E3 is a field-effect transistor (FET) that is used primarily in applications that require a high degree of efficiency and reliability. This device is designed to provide efficient power delivery and very low power consumption. It is also ideal for applications that require a wide range of operation, because it has a low power consumption and a high voltage range (6.4 V to 12 V). The SUM110P06-07L-E3 is an excellent choice for medium to high power applications.

Application Field

The SUM110P06-07L-E3 is suitable for power applications such as power switching, transistor switching and regulated power supplies. It is especially useful in low- and medium-power applications, particularly in motor control, solid-state switching, amplifier switching, relay switching and audio circuit protection applications.The SUM110P06-07L-E3 is also an excellent choice for low-noise amplifier (LNA) and complementary low-power amplifier (CLA)Circuits. The robust performance and low noise level of the SUM110P06-07L-E3 allows for the use of relatively simple circuit designs.In addition, the SUM110P06-07L-E3 is an excellent choice for high frequency and high voltage applications. It is suitable for frequencies up to 1 GHz and can handle voltage levels of up to 12 V.

Working Principle

The SUM110P06-07L-E3 is a single-gate field-effect transistor (FET). A FET is a type of transistor that is characterized by its ability to control its conduction by controlling the amount of current that passes through it using a gate voltage. The SUM110P06-07L-E3 utilizes a three-pin configuration, which is two source pins and one gate pin. When gate voltage is applied to the gate pin, it causes an electric field to be created where both source pins meet. This field causes electrons to move from a higher energy state to a lower energy state and this movement of electrons causes a current to flow from the source to the drain. The amount of current that flows from the source to the drain is determined by the amount of gate voltage that is applied. This makes the SUM110P06-07L-E3 an ideal choice for control applications, because it can be used to control the amount of current that flows through it.In addition to controlling the amount of current the SUM110P06-07L-E3 also has excellent power efficiency due to its low on-state resistance. Low on-state resistance means that less power is lost as heat during its operation and this leads to greater efficiency and power savings.

Conclusion

The SUM110P06-07L-E3 is an excellent choice for use in a wide range of applications that require efficient and reliable power delivery. It has a low power consumption and a wide voltage range, and its single-gate FET technology makes it ideal for applications that require precise control. The robust performance and low noise level of the SUM110P06-07L-E3 make it an ideal choice for medium to high power applications, as well as for low-noise amplifiers and complementary low-power amplifiers. In addition, the device\'s low on-state resistance provides excellent power efficiency, leading to greater efficiency and power savings.

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