SUM110N04-05H-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM110N04-05H-E3TR-ND |
Manufacturer Part#: |
SUM110N04-05H-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 110A D2PAK |
More Detail: | N-Channel 40V 110A (Tc) 3.75W (Ta), 150W (Tc) Surf... |
DataSheet: | SUM110N04-05H-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SUM110N04-05H-E3 is a small signal poer FET MOSFET that is made with advanced Trench MOSFET technology. The device has a small footprint and is designed for use in high speed switching applications. It features high current gain, low gate input capacitance, and low on-state resistance. This device is especially useful for applications such as power management in portable and stationary electronics.
The SUM110N04-05H-E3 is a depletion mode MOSFET which means that it acts as a switch that is opened when a gate voltage is applied. This is opposite to an enhancement mode MOSFET where the switch is closed when a gate voltage is applied. The device is supplied as a dual-inline package (DIP) which contains two MOSFETs. Each device has an on-state resistance (RDSON) of 0.05 ohms and a gate threshold voltage of 0.55 V. It is available in two different in packages (SOT-223 and SOT-89) with different maximum ratings.
The SUM110N04-05H-E3 is a versatile MOSFET which can be used in a number of different applications. It can be used to switch loads with high current requirements since it has a low RDSON. It can also be used as a voltage regulator since the gate voltage can be used to control the source-drain current. It has a low input capacitance, which makes it suitable for high frequency applications such as switching power supplies, DC-DC converters, and RF circuits.
The SUM110N04-05H-E3 can also be used as a logic level MOSFET due to its low gate threshold voltage and high input impedance characteristics. It can be used to switch heavy loads such as motors, relays, and solenoids with minimal input power. It is also suitable for current sensing applications since it has a high transconductance. The device has an built-in voltage clamp which helps in protecting against overvoltage. Its small size makes it suitable for use in compact electronic circuits.
The SUM110N04-05H-E3 is designed for high speed switching applications and can be used in a wide range of applications such as power management, logic level MOSFET switching, and current sensing. It is available in two different packages and is suitable for high frequency applications due to its low input capacitance. The built-in voltage clamp provides protection against overvoltages while its small size makes it suitable for use in compact electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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