SUM110N03-03P-E3

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The SUM110N03-03P-E3 is a power MOSFET from Vishay. It is a surface-mounted insulated-gate field effect transistor (IGFET) which is widely used in high-current and high-voltage applications. The device is a dual-channel MOSFET that can be used to produce levels of current high enough to operate both power supplies and power management applications. This device is suitable for applications such as DC-DC converters, motor control and high-current switching.

General Specifications

The SUM110N03-03P-E3 has an 11 Amp drain current (ID) rating and is a four-pin, ultra-low-ohmic package. It is a low drain-to-source on-state resistance of 0.008Ω and a low threshold voltage of 1.65V. It can handle drain-to-source voltages of up to 110V and a total power rating of 200W. Its operating temperature range is -55°C to 150°C. The PIN configuration is: Source (S), Drain 1 (D1), Drain 2 (D2), and Gate (G)

Working Principle

The SUM110N03-03P-E3 is basically a voltage-controlled device. When a positive voltage (Vg) is applied to the gate terminal of the device, it turns on and a channel forms between the source and drain terminals. This channel allows the flow of electrons from source to drain, creating a current, or drain current (Id) and is referred to as the on-state. When a negative voltage (Vg) is applied to the gate terminal of the device, it turns off and no current is passed from source to drain. This is referred to as the off-state and this is where the MOSFET stands out from other types of transistors. It can actively control the current flow through the channel.

Application Fields

The SUM110N03-03P-E3 is widely used in power supply, motor control and power management applications. It can easily withstand high voltage and current levels with its high power rating as well as its low drain-to-source on-state resistance. It is also used in high-frequency switching applications, due to its fast switching time and low gate charge. This makes it ideal for applications such as DC-to-DC converters, buck converters, and switching regulators. In addition, it can also be used for hot-swap applications, power factor correction, and other high current applications such as server and laptop CPUs.

Conclusion

The SUM110N03-03P-E3 is a dual-channel power MOSFET from Vishay. It is a surface-mounted insulated-gate field effect transistor that is suitable for applications such as DC-DC converters, motor control, and high-current switching. It has an 11 Amp drain current rating, a low drain-to-source on-state resistance of 0.008Ω, and a low threshold voltage of 1.65V. Its applications range from high-frequency switching, buck converters, and switching regulators to power factor correction and hot-swap applications.

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