SUM110P08-11-E3

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The SUM110P08-11-E3 is a silicon N-Channel Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is known as a single transistor. It is used for switching and power amplification applications, and this article will take a closer look at both of these aspects and what the device has to offer.

In terms of its application field, the SUM110P08-11-E3 can be used in motor control and switching applications, such as the power supply of logic circuits. It can also be used as a switch to control the power output of an amplifier such as a class-D amplifier. It is also commonly used in relay applications. Additionally, the device can be used in variable speed drives, as well as in switching multiple outputs in stereo amplifiers and TV sets.

As for its working principle, the SUM110P08-11-E3 is a voltage-driven transistor. It is an enhancement-mode device, meaning that when the gate voltage is applied, the conduction channel between the drain and the source opens and the MOSFET is allowed to turn on. This is known as a non-saturated condition. When the gate voltage is removed, the conduction channel closes, and the MOSFET is switched off. Once the gate voltage is applied again, the conduction channel reopens, and the MOSFET is turned back on in the non-saturated condition.

The device is also capable of handling high currents and voltages, but its main advantage is its low on-resistance. This is due to its low gate-source threshold voltage and its thin gate oxide, as well as its rugged construction and packaging which prevents damage from handling shocks and thermal cycles. Additionally, the device has a low gate-drain capacitance, which means that its input capacitance is also low. This helps to reduce switching losses by providing excellent turn-on and turn-off times.

The SUM110P08-11-E3 is a useful device for a wide range of applications, from motor control and switching to relay control and power supply of logic circuits. It is characterized by its low on-resistance, low gate-source threshold voltage, and low gate-drain capacitance, all of which ensure excellent performance.

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