SUM110P04-05-E3 Discrete Semiconductor Products

The SUM110P04-05-E3 is a single standard product MOSFET that is designed to provide small, compact, and efficient packages suitable for a wide range of applications. This device is particularly well suited for fast switching applications where the reduction in power loss is a benefit. In addition to its fast switching performance, this device can provide high levels of voltage and current during operation.

This MOSFET is designed with a commonly used N-channel architecture which allows it to provide fast switching performance without sacrificing the overall circuit efficiency. The wide-body structure that is utilized with this device also contributes to its fast switching speeds and responds well to switching conditions.

The SUM110P04-05-E3 is characterized by a high-voltage breakdown voltage, low power dissipation, and low sub-threshold current. The on-state performance, characterized by the drain current, is one of the important features of the MOSFET, particularly for power supplies and electronic ballasts applications.

The threshold voltage of this particular MOSFET is about 0.6 volts and the on-state drain-source resistance is about 0.1 ohm which offers excellent performance over a wide range of current modes. Further, it also has an excellent gate-source capacitance performance.

The gate input voltage range is also very important as it affects the gate supply current as well as the switching time. The input range of this device is between 0-10V, and the output range is between 0-20V. As previously mentioned, the SUM110P04-05-E3 is designed to reduce power losses and reduce the overall design complexity.

The working principle of the SUM110P04-05-E3 MOSFET is based on the field-effect principle where a gate voltage is applied to the device to control the current flow. The gate voltage can be applied either in a positive or negative direction, depending on the current control requirement. A positive gate voltage will cause the MOSFET to conduct current and a negative gate voltage will cause it to remain off.

The device can operate at very high speeds with a switching frequency of up to 30MHz, making it suitable for high-frequency switching applications. The device also features a low reverse leakage which makes it suitable for high-side switching applications where the device needs to remain off when there is no signal.

The SUM110P04-05-E3 has a wide range of applications, such as automotive, consumer, industrial, and telecommunication. In automotive applications, they can be used in fuel injection systems, electric power steering systems, electric brakes, engine cooling systems, exhaust gasses recirculation systems, air conditioning systems, etc. The SUM110P04-05-E3 is also suitable for use in consumer applications such as smart home appliances, power supplies, lighting control, etc.

In industrial applications, MOSFETs like the SUM110P04-05-E3 can be used for applications such as motor control, temperature regulation, switching power supplies, dc-dc converters, etc. The SUM110P04-05-E3 is also suitable for use in telecommunication applications such as base stations, fiber optic networks, multimedia systems, etc.

The SUM110P04-05-E3 is a single standard product MOSFET that is designed to provide small, compact, and efficient packages suitable for a wide range of applications. This device is characterized by a high-voltage breakdown voltage, low power dissipation, and low sub-threshold current. The gate input voltage range is also very important as it affects the gate supply current as well as the switching time. The device can operate at very high speeds with a switching frequency of up to 30MHz, making it suitable for high-frequency switching applications. The device also features a low reverse leakage which makes it suitable for high-side switching applications where the device needs to remain off when there

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