SUM110N08-07P-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM110N08-07P-E3TR-ND |
Manufacturer Part#: |
SUM110N08-07P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 75V 110A D2PAK |
More Detail: | N-Channel 75V 110A (Tc) 3.75W (Ta), 208.3W (Tc) Su... |
DataSheet: | SUM110N08-07P-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 208.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4250pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SUM110N08-07P-E3 is a semiconductor device referred to as a MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. It is used in a wide range of applications, particularly in power management and electric motor control, because this type of device is ideally suited for switching and amplifying electric signals. In order to understand how this device works, it is important to first understand the internal structure and function of a metal oxide semiconductor Field Effect Transistor (MOSFET).
A metal oxide semiconductor Field Effect Transistor operates by exploiting the electric field effect present in a metal oxide semiconductor structure. This electric field effect is used for two primary functions. Firstly, it is used to control the flow of current from the source to the drain, acting as a switch when a certain voltage is applied. Secondly, it is used to amplify the voltage in the input signal to the higher voltage used in the load. This makes the MOSFET a useful device for power switching.
The structure of a metal oxide semiconductor Field Effect Transistor is made up of a series of n-type and p-type semiconductor materials which are layered on top of each other. At the bottom layer is a p-type material which acts as a gate, and above this is an n-type material which acts as a source and a drain. All three components are isolated from each other by a layer of insulating material such as silicon dioxide.
When a voltage is applied to the gate, electrons can be attracted to the central p-type material, forming a depletion region in the n-type material. This depletion region acts as a resistance to the flow of current between the source and the drain. The stronger the electric field applied to the gate, the larger the depletion region, and the more resistance to the flow of current. This is known as “enhancing” the electric field, and in this way a MOSFET can be used to control the flow of current in a circuit.
The application of the SUM110N08-07P-E3 can be varied depending on the characteristics of its source and drain, and the size of the depletion region. For example, the device could be used as an amplifier for signals. By applying a voltage to the gate, the current flowing from the source to the drain can be increased or decreased as needed, allowing the signal to be amplified. This is a very useful feature when controlling electric motors, as the precise amount of current necessary for operation can be adjusted.
In addition, the SUM110N08-07P-E3 can be used for power switching applications. By controlling the voltage applied to the gate, the device can be used to switch a circuit on or off to save power, or to regulate the power delivered to a load. This makes it an ideal device for use in a number of different power-saving applications such as lighting control systems.
The SUM110N08-07P-E3 is an ideal device for a range of power management and motor control applications, due to its ability to precisely control the flow of current. It is a reliable and efficient way to control and regulate electric signals, and is well suited for power switching applications. Furthermore, it is relatively simple to integrate into a system, making it an attractive option for many applications.
The specific data is subject to PDF, and the above content is for reference
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