Allicdata Part #: | ZXMN3A06DN8TC-ND |
Manufacturer Part#: |
ZXMN3A06DN8TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 30V 4.9A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.8W Surf... |
DataSheet: | ZXMN3A06DN8TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 17.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 796pF @ 25V |
Power - Max: | 1.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The ZXMN3A06DN8TC is a dual, high performance n-channel trench MOSFET integrated circuit (IC). It has a wide range of applications and is capable of operating at low voltage, high frequency, and low RDSon. Used in power management, automotive, industrial, and other complex circuits, the ZXMN3A06DN8TC offers excellent performance and reliabilty. To understand the operation and application of this device, a basic understanding of field effect transistors (FETs) is necessary.
A FET is a type of transistor that relies on the principle of the electric field to control current flow. It functions as a three terminal device with a source, a drain, and a gate. The source and the drain are the ends of the device, while the gate is an insulated part that acts as an electronic switch. When a voltage is applied to the gate, it creates an electric field between it and the source, controlling the current between the two terminals. A FET is divided into two types: a n-channel type and a p-channel type. The n-channel type utilizes electrons as its carriers and it has a lower power consumption than the p-channel type.
As a dual n-channel MOSFET array, the ZXMN3A06DN8TC is composed of two n-channel FETs on a single IC. These FETs have a transfer characteristic curve (i.e., the graph showing the relationship between gate voltage and drain current) that allows it to be used in various application scenarios. It has a very low RDSon which reduces the amount of power consumed and its very low gate voltage make it suitable for switching applications. It also has a maximum operating voltage of 30V and a maximum operating frequency of 4MHz, a very useful feature for RF applications.
The ZXMN3A06DN8TC has been designed for easy use and its applications range from traditional switching applications to high frequency RF applications. Its simple design makes it easy to incorporate into a wide variety of circuits, allowing for its use in critical power management applications. Its robust design is well suited for automotive applications, as well as industrial and consumer applications. It is also ideal for use in power monitoring and protection circuits.
In conclusion, the ZXMN3A06DN8TC is a versatile device that can be used in a wide range of applications. Its low power consumption and low voltage requirements make it particularly suitable for use in power management and high frequency applications. With its robust design, easy to use design, and overwhelming number of practical applications, the ZXMN3A06DN8TC is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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