Transistors - FETs, MOSFETs - Arrays

The ZXMN3G32DN8TA is a silicon carbide MOSFET array specifically designed to power a wide range of high-frequency power conversion applications. This family of MOSFETs are designed with an advanced cell structure and high-efficiency technology to provide superior reliability, improved thermal performance and fast switching times in comparison with standard MOSFETs.

The ZXMN3G32DN8TA provides a wide range of voltage and current ratings for various application fields. This family has both a common source configuration with a drain-source voltage rating of 600V and also a common gate configuration with a gate-source voltage rating as high as 800 V. It also provides a current capacity of up to 7.3A.

This MOSFET array can efficiently be used in a variety of application fields such as RF power amplifiers, DC-DC converters, switching mode power supplies, battery chargers and other high-frequency power conversion applications.

Working Principle

The ZXMN3G32DN8TA is a four-terminal switch which takes advantage of MOSFETs as a voltage-controlled semiconductor device. The four terminals of the device are commonly referred to as the source, gate, drain and body (or substrate).

MOSFETs are similar to BJTs in that they are electrically controlled current switches. The MOSFET works like a closed switch when a voltage applied to the gate-source terminals exceeds the threshold voltage, and the current can then flow from the source to the drain. In order to turn off the switch, the voltage must drop below the threshold voltage.

The ZXMN3G32DN8TA makes use of the ability for MOSFETs to rapidly switch between their on and off states to control power in a wide array of high-frequency applications. It is specifically designed to provide fast switching times and improved thermal performance while also being able to handle higher currents and voltages, making it ideal for a variety of applications.