ZXMN6A07FTC Allicdata Electronics
Allicdata Part #:

ZXMN6A07FTC-ND

Manufacturer Part#:

ZXMN6A07FTC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 1.2A SOT23-3
More Detail: N-Channel 60V 1.2A (Ta) 625mW (Ta) Surface Mount S...
DataSheet: ZXMN6A07FTC datasheetZXMN6A07FTC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
FET Feature: --
Power Dissipation (Max): 625mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The ZXMN6A07FTC transistor is part of a specific type of field-effect transistor (FET) called an enhancement-mode n-channel MOSFET transistor. This type of transistor provides users with exceptional levels of performance and flexibility as it can be used as both a power switch and an amplifier. The ZXMN6A07FTC is specifically designed to provide low on-state resistance with multiple levels of safety protection.

The application field of the ZXMN6A07FTC can be broken down into two distinct categories; power supply and logic ICs. In power supplies, the ZXMN6A07FTC is often used as a voltage regulator, current limiter, or even as a relay switch. On the other hand, when used in logic ICs, the ZXMN6A07FTC is primarily used as a high-speed signal switch. This type of transistor is also commonly used in digital logic circuits as it can provide a high switching speed and low on-state resistance.

The working principle behind the ZXMN6A07FTC is relatively simple. When the channel of the transistor is in its off-state, the current flow is blocked, however, when the channel is in its on-state, the current flow is allowed to pass through. This is done by the varying levels of voltage applied to the gate. The greater the appli ed voltage, the lower the resistance and the greater the current flow. Similarly, the lower the applied voltage, the higher the resistance and the less current that can flow.

The ZXMN6A07FTC also has a few unique features to provide users with enhanced performance and reliability. These features include its integrated anti-parallel diode and its diode-clamped neutralized gate-source protection. The integrated anti-parallel diode helps to reduce switching loss while the diode-clamped neutralized gate-source protection helps to limit dangerous gate spike voltages and reduce the chance of damage to the gate oxide.

In conclusion, the ZXMN6A07FTC is an exceptional enhancement-mode n-channel MOSFET transistor. It is specifically designed to provide users with low on-state resistance, multiple levels of safety protection, and exceptional speed. This type of transistor is commonly used in both power supplies and logic ICs and its working principle comes down to controlling the resistance levels by adjusting the applied voltage to the gate.

The specific data is subject to PDF, and the above content is for reference

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