ZXMN10A11GTC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXMN10A11GTC Application Field and Working Principle

Nowadays, many modern devices, ranging from medical equipment to industrial instrumentation and motor drives, use FETs and MOSFETs to control electrical current levels precisely and perform simple or highly complex switching functions. Among these FETs and MOSFETs, the ZXMN10A11GTC is a type of MOSFET which is capable of offering very high bulk resistances and low leakage, making it a great choice for a broad range of applications.

The ZXMN10A11GTC is a N-Channel Enhancement Mode MOSFET, manufactured by German company Diodes Incorporated. The MOSFET is manufactured using the so-called Super-MOS technology, which allows for a very high packing density and a wide performance range that covers the needs of various applications. The MOSFET is also provided with a new generation of leadframe, designed to reduce the manufacturing costs and size of the device.

The ZXMN10A11GTC is offered in TO-220 packages and can handle a maximum of 100V and 10A, at a maximum junction temperature of 150℃. It has an extremely low on-resistance of 0.03Ω and a breakdown voltage of 720V. This makes it ideal for a wide range of applications, such as general switching, motor control, medical imaging, pulse generator and similar devices. The ZXMN10A11GTC provides superior performance over its predecessors by offering a very low on-resistance, as well as a much higher breakdown voltage.

Working Principle

The ZXMN10A11GTC is an n-channel enhancement-mode power MOSFET. N-type enhancement-mode MOSFETs have only one gate terminal and an n-type source terminal. The source is connected to a current source so that an input voltage source can be applied to the gate. The gate terminal will then be used to control the MOSFET’s conduction state by providing an attractive electrostatic force. A positive voltage at the gate will increase the MOSFET’s saturation region area, allowing for an increase in current conduction in the device.

When a negative voltage is applied to the gate, the device will enter saturation, and the current flowing through it will be greatly reduced. This property makes the ZXMN10A11GTC insensitive to electrostatic discharges, which makes it ideal for use in applications where longterm reliability is required.

The ZXMN10A11GTC is an enhancement-mode MOSFET, which means that an input voltage level needs to be applied in order to make the device conductive. This makes it ideal for use in applications where it is important to ensure an accurate control of the current conduction in the device, such as motor control applications and similar. The device is also very efficient, as it provides low static on-resistance and very low loss during switching.

Conclusion

The ZXMN10A11GTC is a N-Channel enhancement-mode power MOSFET with very high bulk resistances and low leakage. It is provided with a new generation of leadframe, designed to reduce the size of the device. The MOSFET is ideal for applications such as general switching, motor control, imaging, pulse generation and has a static on-resistance of 0.03Ω and a maximum junction temperature of 150℃. The device ensures a very accurate current conduction control, and is very efficient, which makes it a perfect choice for many applications.

The specific data is subject to PDF, and the above content is for reference