ZXMN3AM832TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3AM832TR-ND |
Manufacturer Part#: |
ZXMN3AM832TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 30V 2.9A 8MLP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 2.9A 1.13W Sur... |
DataSheet: | ZXMN3AM832TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 3.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
Power - Max: | 1.13W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-MLP (3x2) |
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The ZXMN3AM832TA is an N-channel Transistor-FET (TFET) array. TFETs are a type of transistor that leverages current flow and band-to-band tunneling to achieve unique properties such as high electron mobility, low leakage currents, and higher breakdown voltages. This makes it well suited for use in a variety of applications.
The ZXMN3AM832TA is an array of four N-channel MOSFETs. A MOSFET is a type of transistor that relies on a semiconductor-insulating-semiconductor device structure. This structure enables low gate-source capacitance and can allow for faster switching speeds than traditional junction transistors.
The ZXMN3AM832TA array is designed to be plug and play, making it easy to integrate into most circuits. It also has a number of features that make it a desirable choice for certain applications. These include a wide operating temperature range, a low thermal resistance, and ESD protection up to ±15kV.
The working principle behind the ZXMN3AM832TA array is relatively simple. The Array is designed with four N-channel MOSFETs, each with its own source, gate, and drain. When a potential difference is applied to the gate and the source, an electric field is created, called the “gate-effect”. This electric field allows electrons to flow from the source to the drain without passing through any physical barriers. This process is referred to as “field effect conduction”, and it is how the array allows for the control of current flow.
The ZXMN3AM832TA array has a wide range of applications due to its ability to control gate-effect current flow. It can be used for many types of power management involvements, including motor control and load switching. The array can also be used to regulate voltage and current in various circuits, as well as in amplifiers. Additionally, the array can be used as a protection switch in electronic devices and in automotive electronic circuits.
In conclusion, the ZXMN3AM832TA is an N-channel transistor-FET array which enables fast switching speeds and has a wide operating temperature range. The array is designed to be plug-and-play, making it an ideal choice for many power management applications including motor control, load switching, voltage regulation, current regulation, and protection switching. Its working principle is based on field effect conduction, which allows for the control of current flow when a potential difference is applied to the gate and source.
The specific data is subject to PDF, and the above content is for reference
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