ZXMN10A25K Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN10A25KTR-ND |
Manufacturer Part#: |
ZXMN10A25K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 4.2A DPAK |
More Detail: | N-Channel 100V 4.2A (Ta) 2.11W (Ta) Surface Mount ... |
DataSheet: | ZXMN10A25K Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.11W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 859pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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ZXMN10A25K Application Field and Working Principle
The ZXMN10A25K is an ultra-fast, single-channel N-channel Enhancement Mode MOSFET. It is manufactured by Zetex and is a member of their ZX family. It is available in a standard through-hole package, which makes it ideal for use in a wide variety of applications.
The MOSFET is designed to be used in power management applications where high speed switching is required. It is also suitable for DC-DC converters, Class D amplifiers, switching power supplies and motor controllers. The ZXMN10A25K is designed to operate from 2V to 13V, with a maximum drain-source voltage of 25V and a maximum drain current of 11A.
Models of the ZXMN10A25K offer a variety of features, such as high-speed switching and fast switching times. It offers a low gate charge, fast switching times, low on-state resistance and high power efficiency. It is available in surface mount and through-hole packages.
Working Principle
The ZXMN10A25K operates on the basic principles of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology when it is turned on. Enabling electrons to flow through the gate, the MOSFET acts as an electrostatic gate that controls the drain current. When a low voltage is applied to the gate, it conducts and a current flows from the source to the drain.
MOSFETs are either Enhancement-Mode or Depletion-Mode. The ZXMN10A25K is an enhancement-mode MOSFET, which means that the device behaves as an open switch when the gate-to-source voltage (Vgs) is below a certain threshold. In the case of the ZXMN10A25K, the threshold voltage is -2V. Above this threshold, the device’s gates conduct current and the device behaves like a closed switch.
In normal operation, the ZXMN10A25K has a low Drain-Source resistance (RDS(ON)), which means that the drain current can flow easily. This low resistance also results in low losses, thereby increasing the efficiency of the device and reducing heat dissipation. Additionally, the device has a high switching speed, allowing it to perform fast and accurately at high frequencies.
Applications
The ZXMN10A25K is suitable for a variety of power management applications, including DC-DC converters, motion controllers, switching power supplies and high-power amplifiers. It is also suitable for use in automotive, industrial, and consumer electronics, as well as in LED lighting applications.
It is ideal for power supply design and system communications, offering excellent signal integrity in high-speed switching and pulse-width modulation applications. Additionally, the ZXMN10A25K can be used in high-side switching circuits, as it can tolerate positive voltage from the gate to the source. This means that the device can be switched remotely, allowing it to operate at a lower current.
The ZXMN10A25K is a powerful and efficient device suitable for a variety of applications. Its low on-state resistance, high switching speed and fast response time make it an excellent choice for power management and high-speed electronic design. It is available in both surface mount and through-hole packages.
The specific data is subject to PDF, and the above content is for reference
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