Allicdata Part #: | ZXMN2F30FHQTA-ND |
Manufacturer Part#: |
ZXMN2F30FHQTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 4.9A SOT23-3 |
More Detail: | N-Channel 20V 4.9A (Ta) 1.4W Surface Mount SOT-23-... |
DataSheet: | ZXMN2F30FHQTA Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.8nC @ 10V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 452pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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ZXMN2F30FHQTA is a single type MOSFET (metal-oxide-semiconductor field-effect transistors) that is commonly used in many electronics applications. It is a high-voltage, low-current N-channel power MOSFET, which is frequently used in DC-DC converter circuits and load switch applications. With its low on-resistance and low gate threshold voltage, it is an efficient choice for applications in which less power is required.
Application Field
ZXMN2F30FHQTA is primarily used for applications that require fast switching, high current, low total gate charge, and low on-resistance. It is commonly used for DC-DC converters, load switches, motor controls, remote control circuits, and other power supply control applications. It also has applications in automotive and industrial control systems, high-efficiency systems, and battery-powered electronics.
Working Principle
MOSFETs work by applying a voltage potential between its drain and source terminals that are connected to the circuit. This voltage potential increases stream of charge carriers between the source and drain that results in the current flow within the circuit. With the ZXMN2F30FHQTA, the N-channel MOSFET is activated when a voltage is applied to the gate terminal of the transistor. This causes a channel to open up between the source and drain, allowing the current to flow.
The MOSFET\'s drain-source voltage must remain above the gate voltage for the channel to remain open. If the drain-source voltage drops below the gate voltage, the MOSFET will turn off. This can be advantageous in applications where fast switching is required or the controlling device needs to detect when the current is to be turned off. This is called a "zero-voltage" turn-off.
The ZXMN2F30FHQTA has a low on-resistance, which can be very useful in applications where higher currents are involved. The low on-resistance also allows for higher switching speeds and improved efficiency as less power is lost as heat. The low gate threshold voltage also offers improved performance in switching times and power consumption.
Conclusion
The ZXMN2F30FHQTA is a single, N-Channel MOSFET that is suitable for applications requiring fast switching, high current, low total gate charge, and low on-resistance. With its low on-resistance and low gate threshold voltage, it is an efficient choice for applications in which less power is required. It is widely used for DC-DC converters, load switches, motor control systems, remote control circuits, and other power switch applications.
The specific data is subject to PDF, and the above content is for reference
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