ZXMN2B03E6TA Discrete Semiconductor Products

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ZXMN2B03E6TA Application Field and Working Principle

ZXMN2B03E6TA is an advanced low-voltage field-effect transistor (FET) specifically designed to increase efficiency in automotive and high-temperature industrial applications. The device is a 3 mΩ logic level N-type power MOSFET (metal oxide semiconductor field-effect transistor) designed with Nexperia’s advanced processor-controlled technology.

Structure and Materials

The ZXMN2B03E6TA is housed in an SO-8 surface mount plastic packaging with a chip-on-lead configuration. The chip is made of a silicon layer with a metal gate on top. This gate is the gate source voltage, which is typically -2.5V when in active operating mode. The chip is composed of three distinct layers: a silicon substrate, two-dimensional lateral channel, and a gate contact layer.

The physical structure of the ZXMN2B03E6TA is composed of two layers of aluminum gate with a thickness of 20 nm and an integral copper interconnect layer for superior thermal and electrical contact. Die protection is provided by a thinnest and continuous dielectric isolator layer that separates the chip from the package. The contact layer includes an additional protective oxidized silicon layer to provide additional protection from corrosion and oxidation.

Specifications and Features

The ZXMN2B03E6TA has a maximum drain source voltage of 40 V and a maximum current of 6 A. It has a low threshold voltage of 1.5 V, making it suitable for use in low voltage applications, such as LED lighting and automotive electronics. It also has a very low on-resistance of 3 mΩ, providing high efficiency at high-power loads. The device supports up to 6 A continuous operation, with a break-before-make functionality of 100 ms.

Additional features of the ZXMN2B03E6TA include a maximum power dissipation of 1.3 W and an operating temperature range of -55°C to 150°C. It is ESD-protected up to 2000V and is rated for up to 1700V ruggedized PCM (Package Stress Level 1). The device is provided in a UV-resistant surface mount package and is available in both leaded and lead-free versions.

Application Field

Applications for the ZXMN2B03E6TA include switching circuits, power management circuits, and lead-acid battery chargers. It is suitable for a wide range of automotive and industrial applications where low-voltage power control is required. The device is also suitable for lighting control and remote control applications, such as infotainment systems and motor control.

Working Principle

The ZXMN2B03E6TA operates on the principle of voltage-controlled current flow. The gate source voltage defines the drain current of the transistor, and it is usually kept at a negative voltage. When a channel is created between the gate and the drain, current flows between the drain and source terminals. The drain current can be controlled by adjusting the gate voltage.

The ZXMN2B03E6TA is a low-threshold device, allowing the gate to remain at 0V while the drain current is still flowing. This eliminates the need for a gate driver source, allowing direct control of the drain current. As a result, the device can switch quickly between logic levels, making it well-suited for power management and control applications.

Conclusion

The ZXMN2B03E6TA is an advanced low-voltage field-effect transistor designed with Nexperia’s advanced processor-controlled technology. It has a low on-resistance of 3 mΩ, making it suitable for automotive and industrial applications. The device is housed in a surface mount package and is capable of up to 6A continuous operation. The ZXMN2B03E6TA operates on the principle of voltage-controlled current flow and is suitable for applications such as switching circuits, power management circuits, and lead-acid battery chargers.

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