Allicdata Part #: | ZXMN2A01FTC-ND |
Manufacturer Part#: |
ZXMN2A01FTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 1.9A SOT23-3 |
More Detail: | N-Channel 20V 1.9A (Ta) 625mW (Ta) Surface Mount S... |
DataSheet: | ZXMN2A01FTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 303pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZXMN2A01FTC is an N-channel Enhancement Mode MOSFET and is part of the Transistor – Field Effect Transistors (FETs), MOSFETs – Single family. It utilizes a Planar MOSFET technology and is intended for use in applications such as Switching, Motor Control and other general purpose applications.
The ZXMN2A01FTC MOSFET has a low on-state resistance and is capable of handling currents of up to 25 Amps and voltages of up to 60 Volts. The device has a maximum power dissipation rating of 150W, a very wide -50° to 150°C operating temperature range and is available in a through hole TO-220 package.
This MOSFET is suitable for use in many power applications including in power supply designs, motor control circuits, and switching supplies as well as general purpose switching and low power linear applications. Its low on-state resistance makes it suitable for high frequency switching, and also allows it to operate at higher currents with lower losses. Other features include a fast response time, low input capacitance, low gate charge and good electrical noise immunity.
ZXMN2A01FTC Working Principle
At the heart of the ZXMN2A01FTC is an N-channel MOSFET, which utilizes a planar structure. In its simplest form, a MOSFET consists of two p-type regions (source & drain) separated by an n-type region (channel). A gate is placed above the channel, and when a voltage is applied to the gate, it turns on an electron flow from the source to the drain, forming a conducting channel through the MOSFET.
The ZXMN2A01FTC MOSFET is an enhancement mode device, meaning that the channel does not conduct current until a specific threshold voltage is applied to the gate. When the threshold voltage is exceeded, a conducting channel will be formed, allowing current to flow between the source and drain. The size of the channel can be controlled by the voltage applied to the gate, allowing the MOSFET to act as an effective switch.
The ZXMN2A01FTC is an ideal device for many power applications due to its low on-state resistance and wide operating temperature range. Furthermore, its fast response time and low gate charge make it well suited for high frequency switching while its low input capacitance and good electrical noise immunity make it suitable for applications operating in electrically noisy environments.
In conclusion, the ZXMN2A01FTC is a powerful and reliable N-channel Enhancement Mode MOSFET for use in Switching, Motor Control and other general purpose applications. Its high power dissipation rating, wide operating temperature range, low on-state resistance and low gate charge make it suitable for many applications including power supply designs, motor control circuits and switching supplies as well as general purpose switching and low power linear applications.
The specific data is subject to PDF, and the above content is for reference
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