ZXMN3A14FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3A14FTR-ND |
Manufacturer Part#: |
ZXMN3A14FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 3.2A SOT23-3 |
More Detail: | N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | ZXMN3A14FTA Datasheet/PDF |
Quantity: | 54000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 448pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZXMN3A14FTA is an example of a Field-Effect Transistor (FET). A FET is a type of transistor used to control the flow of current in an electronic circuit. It is a three-terminal device with a source, a drain, and a gate. It acts as a switch that when activated, allows current to flow from the source to the drain. It is also known as a voltage-controlled device, as the voltage at the gate determines the current flowing between the source and drain.
The ZXMN3A14FTA is a specific type of FET known as a Metal-Oxide-Semiconductor Field-Effect Transistor, or MOSFET for short. It has two configurations, a depletion type, and an enhancement type. The difference between the two is that the depletion type contains an extra region of n-type material, which acts as a built-in depletion layer that turns off the device when no voltage is applied to the gate. The extra region is not present in the enhancement type, so the device can be turned on and off using a voltage. MOSFETs are available in single, dual, and multi-channel devices, but the ZXMN3A14FTA is a single-channel device with a drain-source voltage (VDS) of 16V, a gate-source voltage (VGS) of 4.5V, and a drain current (ID) of 0.2A.
The working principle of the ZXMN3A14FTA is based on the electrostatic control of an array of electrical charges. When a voltage is applied to the gate, it creates an electric field which exerts an electrostatic force on the charge carriers, or in this case electrons. This increases the number of electrons in the channel region between the source and the drain, allowing current to flow between them. By varying the gate voltage, the number of electrons in the channel can be adjusted, thus controlling the current flow. This makes the device ideal for applications that require very precise control of the current.
The ZXMN3A14FTA can be used in a wide range of applications, such as voltage regulators, power supplies, power converters, switch-mode circuits, and other types of analog and digital integrated circuit (IC) circuits. It is also frequently used in radio frequency amplifiers and RF solutions, such as amplifiers, mixers, and IF amplifiers. In addition, it is used in automotive and industrial applications, such as motor drivers, DC-DC converters, dimmers, and lighting controllers.
The ZXMN3A14FTA is a versatile device that provides excellent performance and is well suited for a range of applications. It is one of the most commonly used FETs for switching and power management, as it offers excellentcharacteristics and robustness. As such, it is a popular choice for designers and engineers when selecting a FET for use in their projects.
The specific data is subject to PDF, and the above content is for reference
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