ZXMN3A01E6TC Allicdata Electronics
Allicdata Part #:

ZXMN3A01E6TC-ND

Manufacturer Part#:

ZXMN3A01E6TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 2.4A SOT23-6
More Detail: N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SO...
DataSheet: ZXMN3A01E6TC datasheetZXMN3A01E6TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The ZXMN3A01E6TC is a type of field-effect transistor (FET). Also known as a metal-oxide-semiconductor FET (MOSFET), this type of transistor is typically found in electronic applications requiring low power consumption and high frequencies. The ZXMN3A01E6TC is a single FET, as opposed to a dual MOSFET, meaning it has one gate and one drain. It is also an enhancement-mode device, meaning that the FET can be turned on or off using a voltage on its gate terminal.

One of the main advantages of using a MOSFET is its use of gate capacitance. This allows for impressive power savings compared to other transistors, as the gate capacitance can enable the gate to remain charged even when no voltage is applied to its gate terminal. This means that the MOSFET can be in a low-power ‘off’ state even when the power supply is still connected.

As a single MOSFET, the ZXMN3A01E6TC has a wide range of applications. One of its primary uses is as an analog switch. By providing a single voltage on the gate, the device can switch a analog signal between two states quickly and easily. This is done by changing the resistance passing through the MOSFET. This switching action can be used in many applications such as noise cancellation, audio amplification, and signal routing. Because of its low power requirements, the ZXMN3A01E6TC is also suitable for use in low power battery operated devices.

Another application of the ZXMN3A01E6TC is as an amplifier. By applying a voltage to the gate, the MOSFET can be used to amplify an incoming signal. This can be used in a variety of applications, such as RF transmission and reception, audio amplification, and in general-purpose digital-to-analog applications. Because the MOSFET is an enhancement-mode device, the gain of the amplifier can be adjusted by varying the gate voltage.

The ZXMN3A01E6TC is also capable of acting as a voltage-controlled resistor. This is done by connecting the source and gate terminals together and applying varying voltages to the gate. As the voltage is varied, the resistance passing through the MOSFET changes accordingly, resulting in a voltage controlled resistor. This feature is useful in applications such as power regulation, current limit protection, and feedback circuits.

Due to its low power requirements and wide range of applications, the ZXMN3A01E6TC is a versatile and reliable MOSFET. It is an effective choice for applications which require low power consumption and high frequencies, making it an ideal choice for low power battery operated devices, analog switching, amplifiers, and voltage controlled resistors.

The specific data is subject to PDF, and the above content is for reference

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