Allicdata Part #: | ZXMN3A01E6TC-ND |
Manufacturer Part#: |
ZXMN3A01E6TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 2.4A SOT23-6 |
More Detail: | N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SO... |
DataSheet: | ZXMN3A01E6TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-6 |
Package / Case: | SOT-23-6 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
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The ZXMN3A01E6TC is a type of field-effect transistor (FET). Also known as a metal-oxide-semiconductor FET (MOSFET), this type of transistor is typically found in electronic applications requiring low power consumption and high frequencies. The ZXMN3A01E6TC is a single FET, as opposed to a dual MOSFET, meaning it has one gate and one drain. It is also an enhancement-mode device, meaning that the FET can be turned on or off using a voltage on its gate terminal.
One of the main advantages of using a MOSFET is its use of gate capacitance. This allows for impressive power savings compared to other transistors, as the gate capacitance can enable the gate to remain charged even when no voltage is applied to its gate terminal. This means that the MOSFET can be in a low-power ‘off’ state even when the power supply is still connected.
As a single MOSFET, the ZXMN3A01E6TC has a wide range of applications. One of its primary uses is as an analog switch. By providing a single voltage on the gate, the device can switch a analog signal between two states quickly and easily. This is done by changing the resistance passing through the MOSFET. This switching action can be used in many applications such as noise cancellation, audio amplification, and signal routing. Because of its low power requirements, the ZXMN3A01E6TC is also suitable for use in low power battery operated devices.
Another application of the ZXMN3A01E6TC is as an amplifier. By applying a voltage to the gate, the MOSFET can be used to amplify an incoming signal. This can be used in a variety of applications, such as RF transmission and reception, audio amplification, and in general-purpose digital-to-analog applications. Because the MOSFET is an enhancement-mode device, the gain of the amplifier can be adjusted by varying the gate voltage.
The ZXMN3A01E6TC is also capable of acting as a voltage-controlled resistor. This is done by connecting the source and gate terminals together and applying varying voltages to the gate. As the voltage is varied, the resistance passing through the MOSFET changes accordingly, resulting in a voltage controlled resistor. This feature is useful in applications such as power regulation, current limit protection, and feedback circuits.
Due to its low power requirements and wide range of applications, the ZXMN3A01E6TC is a versatile and reliable MOSFET. It is an effective choice for applications which require low power consumption and high frequencies, making it an ideal choice for low power battery operated devices, analog switching, amplifiers, and voltage controlled resistors.
The specific data is subject to PDF, and the above content is for reference
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