ZXMN6A10N8TA Allicdata Electronics
Allicdata Part #:

ZXMN6A10N8DKR-ND

Manufacturer Part#:

ZXMN6A10N8TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 7.6A 8-SOIC
More Detail: N-Channel 60V Surface Mount 8-SO
DataSheet: ZXMN6A10N8TA datasheetZXMN6A10N8TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Digi-Reel® 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

Introduction

The ZXMN6A10N8TA is a field effect transistor used in a wide variety of applications, ranging from power conversion and amplification to signal control and switching. It belongs to the family of Field Effect Transistors (FETs) and is a single-gate MOSFET type. In this article, we will be discussing the application field and working principle of the ZXMN6A10N8TA in detail.

Overview

The ZXMN6A10N8TA MOSFET is a single-gate field effect transistor that offers consistent low threshold voltage and low capacitance, making it suitable for use in high-speed switching applications. Its fast switching speeds, high input impedance, and excellent thermal characteristics make it well-suited for applications that require high frequency switching and linear control.The ZXMN6A10N8TA has a maximum drain current of 65 A, a maximum drain-source breakdown voltage of 10 V, and a maximum drain-source on-state resistance of 0.348 ohms. It can operate at temperatures ranging from -55°C to 175°C and is rated up to 50W. It also offers excellent electrostatic discharge (ESD) protection and noise immunity, making it ideal for use in sensitive circuits.

Application Fields

The ZXMN6A10N8TA MOSFET has been designed for use in a wide range of applications. Some of its most common uses include: 1. Power Switching: The ZXMN6A10N8TA is used for power switching applications, such as motor control, power management, and power distribution. It is especially suitable for high-efficiency power converters and DC/DC converters. 2. Signal Control: The ZXMN6A10N8TA is used for signal control and signal switching applications, such as an H-bridge and other signal switching circuits. It is ideal for use in digital circuits and electronic systems. 3. Amplification: The ZXMN6A10N8TA is used for signal amplification applications, such as video and audio signal amplification. It is also suitable for high-power audio amplifiers. 4. Automotive: The ZXMN6A10N8TA is used in automotive applications such as current and voltage monitoring, fuel injection, and air conditioning systems.

Working Principle

The ZXMN6A10N8TA MOSFET works by utilizing the electric field between the source and the drain regions of the MOSFET. The channel that connects the source and the drain regions is known as the gate region, and it can be manipulated by applying a voltage to the gate terminal. When a voltage is applied to the gate terminal, it creates an electric field that induces a current between the source and the drain regions. This current is known as the drain current (ID). When the voltage applied to the gate terminal is below the threshold voltage (VTH), the MOSFET is in the cutoff mode, and no current flows between the source and the drain regions. When the voltage applied to the gate terminal is higher than the threshold voltage (VTH), the MOSFET is in the saturation mode, and a large current flows between the source and the drain regions.

Conclusion

The ZXMN6A10N8TA is a field effect transistor that can be used in a wide range of applications, ranging from power conversion and amplification to signal control and switching. It has excellent thermal characteristics, high input impedance, and fast switching speed, making it ideal for use in high-frequency switching and linear control applications. Additionally, its low threshold voltage, low capacitance, and excellent electrostatic discharge protection make it suitable for use in sensitive circuits. We have discussed the application fields and working principle of the ZXMN6A10N8TA, and hope that this information has been useful.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "ZXMN" Included word is 40
Part Number Manufacturer Price Quantity Description
ZXMN0545FFTA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 450V SOT23F-3...
ZXMN6A09KTC Diodes Incor... -- 1000 MOSFET N-CH 60V 11.2A DPA...
ZXMN3A02X8TA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 5.3A 8-MS...
ZXMN3A02X8TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 5.3A 8MSO...
ZXMN3A02N8TA Diodes Incor... -- 1000 MOSFET N-CH 30V 5.3A 8-SO...
ZXMN10A07FTC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 100V 700MA SO...
ZXMN10A11GTC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 100V 1.7A SOT...
ZXMN10B08E6TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 100V 1.6A SOT...
ZXMN2A01E6TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 20V 2.5A SOT2...
ZXMN2A01FTC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 20V 1.9A SOT2...
ZXMN2A02X8TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 20V 6.2A 8-MS...
ZXMN2A03E6TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 20V 3.7A SOT2...
ZXMN3A01E6TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 2.4A SOT2...
ZXMN3A01FTC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 1.8A SOT2...
ZXMN3A03E6TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 3.7A SOT2...
ZXMN3B04N8TC Diodes Incor... -- 1000 MOSFET N-CH 30V 7.2A 8SOI...
ZXMN6A07FTC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 1.2A SOT2...
ZXMN6A08E6TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 2.8A SOT2...
ZXMN6A11GTC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 3.1A SOT2...
ZXMNS3BM832TA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 2A 8-MLPN...
ZXMN4A06KTC Diodes Incor... -- 1000 MOSFET N-CH 40V 7.2A DPAK...
ZXMN6A25G Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 4.8A SOT2...
ZXMN6A25K Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 7A DPAKN-...
ZXMN2A05N8TA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 20V 12A 8-SOI...
ZXMN3A05N8TA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 12A 8-SOI...
ZXMN6A10N8TA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 7.6A 8-SO...
ZXMN2F34MATA Diodes Incor... -- 1000 MOSFET N-CH 20V 4A DFN-2X...
ZXMN3A02N8TC Diodes Incor... 0.0 $ 1000 MOSFET N-CH 30V 8SOICN-Ch...
ZXMN10A08E6TA Diodes Incor... -- 1000 MOSFET N-CH 100V 1.5A SOT...
ZXMN10A11GTA Diodes Incor... -- 1000 MOSFET N-CH 100V 1.7A SOT...
ZXMN2F30FHQTA Diodes Incor... -- 1000 MOSFET N-CH 20V 4.9A SOT2...
ZXMN10A08DN8TC Diodes Incor... -- 1000 MOSFET 2N-CH 100V 1.6A 8S...
ZXMN2A04DN8TC Diodes Incor... -- 1000 MOSFET 2N-CH 20V 5.9A 8SO...
ZXMN3A04DN8TC Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 30V 6.5A 8SO...
ZXMN3A06DN8TC Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 30V 4.9A 8SO...
ZXMN3A06N8TA Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 30V 8SOICMos...
ZXMN6A09DN8TC Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 60V 4.3A 8SO...
ZXMN6A11DN8TC Diodes Incor... 0.0 $ 1000 MOSFET 2N-CH 60V 2.5A 8SO...
ZXMN2F30FHTA Diodes Incor... -- 1000 MOSFET N-CH 20V 4.1A SOT2...
ZXMN6A07FTA Diodes Incor... -- 1000 MOSFET N-CH 60V 1.2A SOT2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics