ZXMN3F31DN8TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	5.7A
Rds On (Max) @ Id, Vgs:	24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	608pF @ 15V
Power - Max:	1.8W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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Introduction to ZXMN3F31DN8TA

With the increasingly powerful computing power of integrated circuits, the ZXMN3F31DN8TA has grown in popularity as an all-purpose building block for powerful digital circuits that are more power-efficient than their predecessors. It is a complex vertical DMOS (VV) transistor array with ultra-low on resistance and low gate threshold voltage. This transistor is designed for low voltage and low power applications such as voltage regulators, DC-DC converters, power management applications and automotive modules.

Application Field of ZXMN3F31DN8TA

The ZXMN3F31DN8TA is especially well-suited for high-performance applications that require maximum efficiency and excellent ESD (electrostatic discharge) protection. It is particularly useful in power management applications because its compact design ensures that it takes up very little board space and can significantly reduce PCB size and costs. Furthermore, its low static power consumption and low gate gate capacitance allows it to operate at very high speeds while consuming very little power, making it very effective for use in all types of power management applications. Additionally, this device functions perfectly in high temperature and dense, high-density digital circuits, making it suitable for a broad range of industries from consumer to automotive.The ZXMN3F31DN8TA is also suitable for applications such as mobile phones, DECT phones, ebook readers, PDAs, laptop computers, GPS systems and digital cameras. It is most often used in combination with P-channel Mosfets to create complex digital circuits for image processing, video compression, and other low voltage applications.

Working Principle of ZXMN3F31DN8TA

The ZXMN3F31DN8TA is a three-phase CMOS transistor array that can handle transient voltage up to -13V. It features a series of DMOS (VV) transistors and integrated ESD (electrostatic discharge) protection to protect the sensitive circuits below it. It has an ultra-low on-resistance and low gate threshold voltage, meaning it can quickly drive high-power loads with extreme efficiency.The device features a common source MOSFET (pMOS) which is the main switching device. The pMOS senses the voltage level difference between the drain and source, and then turns the MOSFET on and off accordingly. When on, the pMOS will pass the current between the source and the drain and when off, the current flow is blocked. This allows for extremely efficient switching between the source and drain and also helps to keep the output voltage stable by maintaining low power dissipation.The ZXMN3F31DN8TA also has integrated ESD (electrostatic discharge) protection to help protect sensitive circuits from static electricity. It utilizes an ESD protection diode to provide a fast and low-impedance circulating peak ESD current. This prevents static voltage from entering into the device and damaging sensitive circuitry.

Conclusion

The ZXMN3F31DN8TA is a powerful, low power, compact, and efficient transistor array that is suitable for a wide range of applications. It features ultra-low on-resistance and low-power consumption that enable it to be used in all types of power management applications. Additionally, it has integrated ESD (electrostatic discharge) protection that helps to protect sensitive circuits from static electricity. With its broad application field, excellent performance, and reliability, the ZXMN3F31DN8TA is sure to be a popular choice for digital circuit designers.

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