Allicdata Part #: | ZXMN6A09DN8TC-ND |
Manufacturer Part#: |
ZXMN6A09DN8TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 60V 4.3A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Sur... |
DataSheet: | ZXMN6A09DN8TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1407pF @ 40V |
Power - Max: | 1.25W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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ZXMN6A09DN8TC is a transistor module containing two N-channel power MOSFETs with built-in protection circuits. It belongs in the Transistors - FETs, MOSFETs - Arrays category of electronic components and devices. This device is a discrete component, mostly used in power management applications.
A MOSFET, or metal oxide semiconductor field-effect transistor, is a type of transistor that uses an electric field to control the flow of current through it. It’s a voltage-controlled device, which means that when voltage is applied to its gate terminal, it will open or close the flow of current between its source and drain terminals. The ZXMN6A09DN8TC is a type of power MOSFET that is optimized for use in high power applications such as motor control, power conversion, and power switching.
The built-in protection circuits of the ZXMN6A09DN8TC are designed to prevent damage in the event of over-current or over-temperature conditions. It has a built-in Over-Temperature Protection circuit that shuts down the device if the temperature inside the device exceeds a certain level. It also has built-in Over-Current protection that shuts down the device if the current exceeds a certain level. This additional protection makes the ZXMN6A09DN8TC very reliable in power management applications.
The working principle of the ZXMN6A09DN8TC is the same as that of any other power MOSFET device: when a voltage is applied to the gate terminal, it generates an electric field that controls the flow of current between the source and drain terminals. The device is made up of two N-channel MOSFETs and a protection circuit. The N-channel MOSFETs are the active components that control the flow of current between the source and drain. The protection circuit is designed to protect the MOSFETs in the event of over-current or over-temperature conditions.
In conclusion, the ZXMN6A09DN8TC is a power MOSFET module optimized for use in high-power applications. It has built-in protection circuits to protect the MOSFETs in the event of over-current or over-temperature conditions. This device is typically used in power management applications such as motor control, power conversion, and power switching. It works on the principles of voltage control, whereby voltage applied to the gate terminal controls the flow of current between the source and drain.
The specific data is subject to PDF, and the above content is for reference
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