ZXMN2A05N8TA

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The ZXMN2A05N8TA is a high-performance N-channel enhancement mode Field Effect Transistor (FET). It’s a single, monolithic device with a single gate and a drain-source channel. The device is well-suited for a variety of power management applications and delivers superior performance as a switched-mode power supply load switch and output load switch.

The ZXMN2A05N8TA has a low on-resistance of only 5 ohms and a maximum gate current of 5 mA, allowing it to handle heavier DC electrical loads with little loss in performance. The device is capable of carrying up to 10A of current and operating with a maximum drain-source voltage of 20 volts.

The FET’s gate-source voltage must be held below the device’s absolute maximum of ±10V. To ensure proper operation, the absolute maximum Gate-Source Voltage (VGSS) must never exceed 20 volts. The FET’s drain-source voltage must remain below the rated maximum, typically 20V.

The ZXMN2A05N8TA utilizes insulated gate bipolar transistor (IGBT) technology, allowing it to serve as a fast switching device with relatively low resistance. This device also incorporates a fast intrinsic diode, allowing it to conduct current in both directions. These features combine to make the ZXMN2A05N8TA ideal for power management applications.

The ZXMN2A05N8TA’s working principle is based on the behavior of the charge carriers inside a MOSFET device. As the gate voltage (VGS) increases, the number of allowed electrons increases, allowing current to flow from the source to the drain (channel pinch-off) when it reaches its threshold voltage (Vth). This principle is important for power electronics as it allows for efficient switching and regulation of current in many applications.

The ZXMN2A05N8TA has many uses, ranging from consumer electronics and automotive applications to industrial automation systems and aerospace applications. It’s used to regulate current and switch loads in DC-DC converters, battery chargers, inverters, and other power management systems. The FET’s low on-resistance, fast switching speeds, and robust design make it suitable for both consumer and industrial applications.

The ZXMN2A05N8TA is a highly-effective, efficient and reliable FET device. Its low on-resistance and fast switching speeds make it an ideal choice for power management applications. The device’s ability to conduct current in both directions, as well as its robust design, also make it suitable for both consumer and industrial applications.

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