ZXMN10A07ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN10A07ZTR-ND |
Manufacturer Part#: |
ZXMN10A07ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 1A SOT-89 |
More Detail: | N-Channel 100V 1A (Ta) 1.5W (Ta) Surface Mount SOT... |
DataSheet: | ZXMN10A07ZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 138pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-89-3 |
Package / Case: | TO-243AA |
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ZXMN10A07ZTA is a N-channel enhancement-mode (normally-off) field effect transistor (FET), which is suitablefor a wide range of applications. This thorough review will discuss the information regarding the application ofthis device as well as its working principle.
The ZXMN10A07ZTA N-Channel MOSFET is a small-signal silicon transistor, suitable for controlling largeloads with a slight switch. Its low on-state resistance conduction capabilities make ZXMN10A07ZTA suitablefor high-speed switching with low power dissipation, making it an ideal choice in switch-mode power supplierapplications. This device is also suitable for use in many other applications, including general purposeamplifiers, adjustable DC regulation and line drivers.
The working principle of the ZXMN10A07ZTA N-Channel MOSFET consists mainly of two components- a sourceand a gate. The source is used to supply the main current through the transistor. This current flows through oneof the three terminals on the transistor, the drain. The gate is used to control the amount of current flowingthrough the drain by applying an electric field to the gate terminal. The gate is also called the controlterminal, as it is responsible for controlling the amount of current flowing through the drain.
When a positive voltage is applied to the gate terminal, the field effect effect allows electrons to move fromthe source to the drain. This increases the current flowing from the source to the drain, and the amount ofcurrent flowing through the drain is proportional to the voltage applied to the gate terminal. When a negativevoltage is applied to the gate terminal, the field effect effect restricts the number of electrons flowing from thesource to the drain, and the amount of current flowing through the drain is reduced. This is why theMOSFET is often used as a switch.
The ZXMN10A07ZTA N-Channel MOSFET is a small-signal transistor that is suitable for many applications,such as switch-mode power supplies, adjustable DC regulation and line drivers. Its low on-state resistanceconduction capabilities make it an ideal choice for high-speed switching with low power dissipation. Theworking principle of the ZXMN10A07ZTA consists of a source and a gate. The gate controls the amount ofcurrent flowing from the source to the drain by applying an electric field to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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