ZXMN6A08E6QTA Discrete Semiconductor Products

Gate Charge (Qg) (Max) @ Vgs:	5.8nC @ 10V
Base Part Number:	ZXMN6A08
Package / Case:	SOT-23-6
Supplier Device Package:	SOT-26
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	459pF @ 40V
Vgs (Max):	±20V
Series:	--
Vgs(th) (Max) @ Id:	1V @ 250µA
Rds On (Max) @ Id, Vgs:	80 mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.8A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The ZXMN6A08E6QTA field effect transistor (FET) is a high voltage, low current field effect transistor used in a variety of applications. Developed by Zetex Semiconductors, this single N-Channel Enhancement mode MOSFET is the perfect choice for applications requiring a low voltage, high current transistor.

Function and Application

Field effect transistors (FETs) are transistor devices with an insulated gate that can be opened and closed, allowing the flow of electrons between the source and drain, and the polarization of the gate determines the amount of current flowing through the device. MOSFETs, short for metal oxide semiconductor field effect transistors, are the most commonly used type of FET due to their high power efficiency, low power consumption and low cost.The ZXMN6A08E6QTA is a single N-Channel Enhancement mode FET, which is designed for low voltage/high current applications. It is particularly well suited for switching circuits as it can handle up to 6A of continuous current, making it ideal for controlling motor drivers or other large loads. It can be used in battery powered applications due to its low power consumption and low voltage operation capability. It is also suitable for high frequency switching applications thanks to its low internal gate capacitance and minimal Miller effect. It is also a high voltage device, with a maximum voltage rating of 600V.The ZXMN6A08E6QTA has several other advantages, such as a wide operating temperature range (-55 to 200 °C) and a low gate charge, making it ideal for applications such as industrial automation, LED lighting, motor control and power conversion.When used in a circuit, the ZXMN6A08E6QTA operates as follows: when a voltage is applied to the gate, the MOSFET channels off electrons, causing a low resistance path between the source and the drain. This allows current to flow between the source and the drain and the MOSFET will act as a switch, with its on/off state determined by the amount of voltage applied to the gate.

Conclusion

The ZXMN6A08E6QTA is a versatile single N-Channel Enhancement mode MOSFET from Zetex Semiconductors. It is ideal for applications where low voltage/high current is required and offers several advantages, including a wide operating temperature range, low power consumption and low gate charge. Its working principle is simple: when a voltage is applied to the gate, the MOSFET will turn on/off, acting as a switch within the circuit. It is perfect for applications such as industrial automation, motor control and LED lighting.

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