ZXMN6A09GTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN6A09GTR-ND |
Manufacturer Part#: |
ZXMN6A09GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 6.9A SOT223 |
More Detail: | N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-... |
DataSheet: | ZXMN6A09GTA Datasheet/PDF |
Quantity: | 53 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1407pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24.2nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 8.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN6A09GTA transistor is an N-channel enhancement mode vertical X-TD MOSFET. It is often categorized as a single FET or a MOSFET, and traditionally used for various high-speed switching applications. This transistor is manufactured by Nexperia, and it exhibits characteristics such as low on-resistance, short turn-on time, high switching speed, and accuracy.
Application Fields
The ZXMN6A09GTA is well suited for a large number of electronic applications, including:
- High-Speed Switching
- Power Management
- Logic Level Gate Drive
- Automotive and Motor Drive Circuits
- DC/DC Converters
- Load Switching
- Audio Amplifier
- Other Applications
This device is specifically designed for working in power management applications with high current demands. Some of the notable features include high switching speed and low on-resistance, which not only allows for efficient energy transfer, but also helps reduce power loss due to heating effects. Additionally, this device exhibits excellent thermal resistance that enables it to be deployed in highly demanding applications.
Working Principle
The ZXMN6A09GTA relies on an enhancement mode vertical X-TD MOSFET (metal oxide semiconductor field effect transistor) to perform its switching operations. This device consists of a gate, a source and a drain, which are connected in a schematic form. When a suitable potential is applied to the gate, it induces an electric field in the semiconductor between the drain and the source. This electric field will cause the electrons in the semiconductor to flow, thus allowing current to flow between the drain and the source. When the electric field induced by the gate connections is removed, no current will flow between the drain and the source, thus turning it off. In this way, the ZXMN6A09GTA can be used for a variety of high speed switching and control applications.
The ZXMN6A09GTA utilizes the capability to turn itself on and off in a reliable and efficient manner. This enables it to operate in a wide variety of power management, logic level gate drive, load switching, and audio amplifier applications. Additionally, the ZXMN6A09GTA exhibits excellent thermal resistance, enabling it to be used in more demanding applications. The ZXMN6A09GTA can also be used for high-speed switching operations in various automotive and motor drive circuits, as well as DC/DC converters.
Overall, the ZXMN6A09GTA is an effective single FET or MOSFET ideal for a variety of high-speed switching and control applications. Its low on-resistance and high switching speed features allow for efficient energy transfers and help reduce power loss due to heating effects. Additionally, the ZXMN6A09GTA exhibits excellent thermal resistance, enabling it to be used in more demanding applications. This device can also be deployed in multiple applications, ranging from automotive to motor drive circuits.
The specific data is subject to PDF, and the above content is for reference
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