ZXMN2B14FHTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN2B14FHTR-ND |
Manufacturer Part#: |
ZXMN2B14FHTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 3.5A SOT23-3 |
More Detail: | N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | ZXMN2B14FHTA Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 872pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 3.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN2B14FHTA is a single, N-channel, field-effect transistor (FET) that is commonly used in many electronic applications as a voltage-controlled switch. A field-effect transistor functions by using an electric field to control the conductivity between its source and drain pins. It works off of two primary components: the gate, which is responsible for controlling the electrostatic field, and the channel, which is a conducting path between the source and drain pins.
The ZXMN2B14FHTA has a drain to source voltage rating of 60V, a drain-source on-state resistance of 0.11 ohm, a maximum gate to source voltage rating (VGS) of 20V, and a maximum drain current of 20A. The device is constructed from a silicon-based semiconductor material, making it well-suited for use in high-frequency applications. It also is able to handle relatively high power dissipation; it has a thermal resistance of 3.2°C/W.
These characteristics make the ZXMN2B14FHTA suitable for many applications, such as switching in power supplies, motor control, and amplifier circuits. The device is also well-suited for use as a basic switch in logic circuits and signal switching applications, allowing a signal to be passed or blocked depending on the voltage applied to the gate pin. Additionally, the device can be used in audio equipment, amplifiers, and other applications that require low on-state resistance.
The ZXMN2B14FHTA\'s working principle is relatively straightforward. When a small voltage is present on the gate pin, the device acts as an open circuit. This means that no current can flow between the source and drain pins. However, when a larger voltage is applied to the gate pin, the device acts like a closed switch; it then allows current to flow from the source to the drain pin. By controlling this voltage, the device is able to modulate the current passing through it.
In conclusion, the ZXMN2B14FHTA is a N-channel field-effect transistor that can be used in a wide range of applications, from motor control and power supplies to logic and signal switching circuits. Its main advantage is its ability to control the current passing through it by modulating the gate voltage. Thanks to its relatively low on-state resistance, it is well-suited for use in high-frequency and high power applications.
The specific data is subject to PDF, and the above content is for reference
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