ZXMN10A08GTA Allicdata Electronics

ZXMN10A08GTA Discrete Semiconductor Products

Allicdata Part #:

ZXMN10A08GTR-ND

Manufacturer Part#:

ZXMN10A08GTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 2A SOT223
More Detail: N-Channel 100V 2A (Ta) 2W (Ta) Surface Mount SOT-2...
DataSheet: ZXMN10A08GTA datasheetZXMN10A08GTA Datasheet/PDF
Quantity: 71000
Stock 71000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The ZXMN10A08GTA is a Single N-Channel ESD-Protected, small signal logic level Field Effect Transistor (FET), designed specifically for use in compact portable electronic equipment. It is designed to minimize ESD effects, even when externally exposed in unshielded conditions, at all power levels. It is ideal for a wide variety of applications, including Automotive, industrial, and Medical equipment.

This single transistor has a maximum drain current I D of 18 A, a drain source resistance R DS of 8.5 mΩ, a drain source breakdown voltage BV DSS of 40 V, and a threshold voltage V GS (th) of 1.8 V. It can work within a wide range of temperatures from -55 °C to +150 °C, and can endure a maximum power dissipation of 18 W. It has a low ON-resistance, making it highly efficient in less power usage and higher thermal dissipation. It is also highly reliable, and provides very fast switching speed.

The ZXMN10A08GTA is an N-channel FET, it works based on the principle of a field of electric charge which controls the conductivity of a semiconductor material. It works under a specific gate-source voltage (V GS ) and drain-source voltage (V DS ).

When V GS < threshold voltage (V th) the FET is fully \'OFF\', and no current flows through the drain and source. When V GS > V th, the electric field will start to increase the electric charge of the channel and the FET will start to conduct current.

The operation and amount of electric charge for each FET is unique and determined by several factors, such as the FETs structure and materials, the voltage applied across the channel and gate, and the gate insulation. As the voltage across the gate and channel increases, the electric charge will increase and the current will increase; as the voltage decreases, the electric charge will decrease and the current will decrease.

The ZXMN10A08GTA operating voltage range is up to 40 V and it is designed to offer an excellent combination of R DS , current capability and fast switching speed. This device is ideal for automotive, industrial and medical equipment, due to its low ON resistance, high efficiency, low power consumption, and fast switching speed.

This device is highly reliable, it has ESD protection to withstand electrostatic discharge (ESD) and has a high thermal dissipation, making it suitable for automotive, industrial and medical equipment. It is also beneficial for aerospace, medical, and telecommunications equipment, where reliability and stability is paramount.

In conclusion, the ZXMN10A08GTA is suitable for a wide range of applications, due to its low ON resistance, high current capability, fast switching speeds, low power consumption, and ESD protection. It is also reliable and stable, making it suitable for automotive, industrial, medical, aerospace, telecommunications, and consumer electronics equipment.

The specific data is subject to PDF, and the above content is for reference

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