ZXMN10A25GTA Discrete Semiconductor Products |
|
Allicdata Part #: | ZXMN10A25GTATR-ND |
Manufacturer Part#: |
ZXMN10A25GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 2.9A SOT223 |
More Detail: | N-Channel 100V 2.9A (Ta) 2W (Ta) Surface Mount SOT... |
DataSheet: | ZXMN10A25GTA Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 859pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The ZXMN10A25GTA is one of the most popular MOSFETs due to its impressive performances and wide-spanning application field. It is a symmetrical N-channel enhancement mode MOSFET, which allows it to be used in a wide array of circuits. In this article we will discuss the application field and working principle of the ZXMN10A25GTA to give readers a better understanding of this insightful MOSFET.
The ZXMN10A25GTA is the ideal MOSFET to be used in driver and switching applications. It is appropriate for both high-side and low-side operation and can be used to switch both DC and AC loads. It boasts a very low threshold, which makes it ideal for low-power designs, while also having a very low on-state Rds(on) at a maximum of 10 mΩ. This makes the MOSFET attractive for use in high-power designs as well. Furthermore, it has an ultra low gate charge of only 6.4nC for fast operations with fewer gate ringing, which makes it suitable for high-speed switching applications.
The ZXMN10A25GTA is also renowned for its excellent noise performance. This is because it operates in enhancement mode and uses MOS technology, which helps to reduce electric noise generated by the device. This makes it ideal for high-fidelity applications in which minimal electrical noise is essential. Additionally, the MOSFET is electrically stable and incorporates a temperature compensation element that helps to minimize temperature variations.
The ZXMN10A25GTA also has a wide operating temperature range of -55°C to 150°C. This makes it suitable for use in various applications where the environment has extreme temperatures. It is also capable of operating at a maximum voltage of 30V and can safely withstand transient voltages up to 200V.
Now that we have discussed the application field of the ZXMN10A25GTA, let’s take a look at its working principle. The working principle of this MOSFET is relatively simple. When a voltage is applied to the gate terminal, it creates an electric field that attracts electrons from the source to the drain. This creates a channel between the source and drain that conducts electricity and allows current to pass.
The ZXMN10A25GTA uses an enhancement mode MOSFET, which means that the channel between the source and drain is off when no voltage is applied at the gate. This makes the device safe to use in applications with high voltages since no current will be conducted unless voltage is applied to the gate. When voltage is applied to the gate, the electric field “opens” the channel and allows current to pass through the device. This is why the ZXMN10A25GTA is often used as a switch in driver and switching applications.
In conclusion, the ZXMN10A25GTA is a popular MOSFET due to its excellent performance and wide application field. It is the ideal choice for driver and switching applications due to its low on-state Rds(on), low gate charge, and wide operating temperature range. Furthermore, it operates in enhancement mode, which makes it safe to use in applications with high voltages as no current will be conducted unless voltage is applied to the gate. We hope this article has helped to shed some light on the application field and working principle of the ZXMN10A25GTA.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ZXMN0545FFTA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 450V SOT23F-3... |
ZXMN6A09KTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 11.2A DPA... |
ZXMN3A02X8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.3A 8-MS... |
ZXMN3A02X8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.3A 8MSO... |
ZXMN3A02N8TA | Diodes Incor... | -- | 1000 | MOSFET N-CH 30V 5.3A 8-SO... |
ZXMN10A07FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 700MA SO... |
ZXMN10A11GTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.7A SOT... |
ZXMN10B08E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.6A SOT... |
ZXMN2A01E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 2.5A SOT2... |
ZXMN2A01FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.9A SOT2... |
ZXMN2A02X8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 6.2A 8-MS... |
ZXMN2A03E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 3.7A SOT2... |
ZXMN3A01E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 2.4A SOT2... |
ZXMN3A01FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.8A SOT2... |
ZXMN3A03E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.7A SOT2... |
ZXMN3B04N8TC | Diodes Incor... | -- | 1000 | MOSFET N-CH 30V 7.2A 8SOI... |
ZXMN6A07FTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.2A SOT2... |
ZXMN6A08E6TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.8A SOT2... |
ZXMN6A11GTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 3.1A SOT2... |
ZXMNS3BM832TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 2A 8-MLPN... |
ZXMN4A06KTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 40V 7.2A DPAK... |
ZXMN6A25G | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 4.8A SOT2... |
ZXMN6A25K | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 7A DPAKN-... |
ZXMN2A05N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 20V 12A 8-SOI... |
ZXMN3A05N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A 8-SOI... |
ZXMN6A10N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 7.6A 8-SO... |
ZXMN2F34MATA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4A DFN-2X... |
ZXMN3A02N8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 30V 8SOICN-Ch... |
ZXMN10A08E6TA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
ZXMN10A11GTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 1.7A SOT... |
ZXMN2F30FHQTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4.9A SOT2... |
ZXMN10A08DN8TC | Diodes Incor... | -- | 1000 | MOSFET 2N-CH 100V 1.6A 8S... |
ZXMN2A04DN8TC | Diodes Incor... | -- | 1000 | MOSFET 2N-CH 20V 5.9A 8SO... |
ZXMN3A04DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 6.5A 8SO... |
ZXMN3A06DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 4.9A 8SO... |
ZXMN3A06N8TA | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8SOICMos... |
ZXMN6A09DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 4.3A 8SO... |
ZXMN6A11DN8TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2.5A 8SO... |
ZXMN2F30FHTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 4.1A SOT2... |
ZXMN6A07FTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 1.2A SOT2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...