ZXMN2F34FHTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN2F34FHTR-ND |
Manufacturer Part#: |
ZXMN2F34FHTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 3.4A SOT23-3 |
More Detail: | N-Channel 20V 3.4A (Ta) 950mW (Ta) Surface Mount S... |
DataSheet: | ZXMN2F34FHTA Datasheet/PDF |
Quantity: | 54000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 950mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 277pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 2.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN2F34FHTA is a N-channel small signal MOSFET (metal-oxide semiconductor field-effect transistor) with an ultra-low threshold voltage and small footprint. This device is designed for automotive, industrial and consumer applications where space is of concern.
The ZXMN2F34FHTA is built on a silicon carbide (SiC) substrate and features a 5-ohm drain-source resistance at 5V and a 200mV maximum gate threshold voltage. It has a 3.2V to 16V drain-source voltage and 250mA continuous drain current rating. The device also offers robust avalanche behavior due to its SiC substrate.
There are several application areas where the ZXMN2F34FHTA excels. It can be used as a level shifter, to provide isolation in circuits, to switch up to 16V of load voltage, as a high-frequency switch in communication and automotive applications, for digital power applications, and for space-constrained applications such as medical and consumer electronics.
The ZXMN2F34FHTA works on the principle of field-effect. It is a type of transistor which operates by modulating the conductivity of a channel between the source and drain terminals by applying a voltage to a gate terminal. This characteristic is what makes the FET (Field-Effect Transistor) desirable for many digital, analog and power applications.
When the gate terminal receives a signal, it controls the amount of current that flows in the channel between the source and drain terminals. This makes it useful for a wide range of applications where energy saving and high-frequency signal capabilities are desired. For example, it can be used to switch between low and high signal levels.
The ZXMN2F34FHTA is also particularly useful for mobile and battery-powered electronics, as it features a lower drain-source voltage, lower gate threshold voltage and low gate capacitance, making it more energy-efficient than other similar devices. The device is also capable of switching and controlling high-frequency signals up to 500MHz.
In conclusion, the ZXMN2F34FHTA offers the advantages of low power consumption and high-frequency signal capabilities, making it suitable for a wide range of applications, including automotive, industrial, medical and consumer electronics. In addition, its small footprint and low gate capacitance make it suitable for space-constrained applications. The ZXMN2F34FHTA is an excellent choice for applications that require low power consumption and high-frequency switching.
The specific data is subject to PDF, and the above content is for reference
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